Semiconductor Package Through-Via Exposure via Passivation

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Solution Overview

Problem

The miniaturization of semiconductor chips and packages has made them difficult to handle, leading to reduced manufacturing yield and increased production time, thereby decreasing productivity and reliability.

Innovation Solution

A method of manufacturing semiconductor packages involves preparing a parent substrate with package board parts, mounting chips with through-via electrodes, forming mold layers, and applying a passivation layer to expose and protect the electrodes, allowing for the stacking and connection of additional chips, and finally singulating the packages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the size of semiconductor chips and packages is reduced, then the functionality and integration density are improved, but the handling difficulty increases and manufacturing yield decreases

Engineering Contradiction:
Improvechip sizeVSAvoidmanufacturing yield
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The chip structure is segmented into multiple functional layers including through-via electrodes, mold layers, and passivation layers. This segmentation allows each layer to be optimized independently for both miniaturization and manufacturing reliability, with larger support structures providing stability while smaller functional elements achieve high integration density

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Mold layers are formed to cover and protect the back sides of chips before final assembly, and passivation layers are applied to protect through-via electrodes in advance. These preliminary protective actions prevent damage during handling and assembly, maintaining high manufacturing yield even as chip sizes are reduced

Inventive Principle:
Principle #10Preliminary action

2Volume of moving object

If the size of semiconductor chips and packages is reduced, then the integration density is improved, but the handling difficulty increases and manufacturing time increases

Engineering Contradiction:
Improvepackage sizeVSAvoidmanufacturing time
Core Design Contradiction:
Volume of moving objectVSProductivity

Solution Approach 1:

Multiple protective and functional layers (mold layers, passivation layers, and interlayer insulating layers) are merged into an integrated multi-layer structure. This combination streamlines the manufacturing process by reducing the number of separate handling steps required, thereby decreasing manufacturing time while maintaining the reduced package size

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The mold layers serve multiple functions simultaneously: they protect the back sides of chips, provide structural support, enable planarization for subsequent layer formation, and facilitate heat dissipation. This multi-functionality reduces the need for additional separate components and steps, improving manufacturing efficiency

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If through-via electrodes are exposed for electrical connection, then the electrical connectivity is improved, but the chip structure becomes more vulnerable to damage

Engineering Contradiction:
Improveelectrical connectivityVSAvoidchip structural integrity
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The passivation layer is selectively removed only at specific locations where through-via electrodes need to be exposed for electrical connections, while the rest of the chip structure remains protected. This localized approach maintains structural integrity in protected areas while enabling necessary electrical connectivity at exposed points

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The chip structure employs composite material layers including passivation layers made of polymer materials or CVD insulating layers over the through-via electrodes. These composite structures provide both mechanical protection and electrical functionality, maintaining structural integrity while enabling electrical connections

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method improves the handling and manufacturing efficiency of semiconductor packages, increasing yield and productivity while enhancing reliability by allowing easier chip design and reducing production time.

Implementation Method 1

forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes

Methodology Applied
Scientific EffectPhysical barrier protection:

Implementation Method 2

etching the exposed back sides of the first chips to thin the first chips and to expose back sides of the through-via electrodes

Methodology Applied
Scientific EffectChemical etching:

Implementation Method 3

planarizing the first mold layer to expose the back sides of the first chips

Methodology Applied
Scientific EffectMechanical planarization:

Implementation Method 4

The first sub-passivation layer may include at least one chemical vapor deposition (CVD) insulating layer

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS8802495B2Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
Publication Date: 2014.08.12 SAMSUNG ELECTRONICS CO LTD
  • US8802495B2 patent drawing
  • US8802495B2 patent drawing
  • US8802495B2 patent drawing

AI summary

A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips, planarizing the first mold layer to expose back sides of the first chips, etching the exposed back sides of the first chips to expose back sides of the through-via electrodes, forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes, and selectively removing the passivation layer to expose the back sides of the through-via electrodes.