Semiconductor Package Through-Wiring Direct Wiring Layer Connection

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Solution Overview

Problem

Conventional semiconductor packages with via-holes face limitations in reducing package size and selecting insulating materials due to the need for thick first insulating layers and the presence of additional metal pads, which restricts fine pitch patterning and increases thickness.

Innovation Solution

A semiconductor package design that eliminates the need for additional metal pads by directly connecting through-wiring to the wiring layer, allowing for a slim and lightweight structure with a thin insulating layer, and includes a through-wiring that extends from the substrate's inner surface, enabling coplanar or slightly protruding ends, and uses a conductive or non-conductive through member to facilitate electrical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a metal pad is formed on the upper surface of the substrate to connect the pad of the semiconductor chip with the via-hole, then electrical connection is achieved, but the first insulating layer must be coated more thickly to uniformly cover the metal pad, limiting insulating material selection and fine pitch patterning

Engineering Contradiction:
Improveelectrical connectionVSAvoidinsulating layer thickness
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention extracts and eliminates the metal pad component from the conventional structure. Instead of forming a metal pad on the upper surface of the substrate, the through-wiring directly extends from the inner circumferential surface of the via-hole to connect with the wiring layer, removing the source of the thickness problem while maintaining electrical connection functionality

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention merges the function of the metal pad and the through-wiring into a single integrated structure. The through-wiring directly connects the via-hole to the wiring layer without requiring a separate metal pad, combining multiple functions into one component and simplifying the overall structure

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If a thick first insulating layer is coated to uniformly cover the metal pad, then uniform insulation is achieved, but the selection of insulating materials is limited and fine pitch patterning faces limitations

Engineering Contradiction:
Improveinsulation uniformityVSAvoidinsulating material selection
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

By removing the metal pad that caused the thickness issue, the invention enables the use of thinner insulating layers. This extraction allows for greater versatility in insulating material selection and enables fine pitch patterning that would be impossible with thick insulating layers

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If additional metal pads and thick insulating layers are used to ensure electrical connection, then connection reliability is improved, but the total package thickness increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidpackage thickness
Core Design Contradiction:
ReliabilityVSLength of moving object

Solution Approach 1:

The invention extracts the unnecessary metal pad and thick insulating layer components, directly connecting the through-wiring to the wiring layer. This elimination of redundant components significantly reduces the total package thickness while maintaining reliable electrical connection

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

By merging the connection functions into a single through-wiring structure that directly connects to the wiring layer, the invention eliminates the need for separate metal pads and thick insulating layers, achieving both connection reliability and thin profile

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9653397B2Semiconductor package and method of manufacturing the same
Publication Date: 2017.05.16 NEPES CO LTD
  • US9653397B2 patent drawing
  • US9653397B2 patent drawing
  • US9653397B2 patent drawing

AI summary

Disclosed herein are a semiconductor package and a method of manufacturing the same, which allows a conductive path to be provided to connect upper and lower portions of the semiconductor package. A semiconductor package according to the present invention includes a semiconductor chip, a substrate including an accommodating portion to accommodate the semiconductor chip, a sealing material configured to mold the semiconductor chip and the substrate to be integrated, a through wiring configured to vertically pass through the substrate, a wiring portion configured to electrically connect the semiconductor chip and one side of the through wiring, and an external connection portion to electrically connected to the other side of the through wiring and configured to be able to be electrically connected to an outside, wherein a wiring layer of the wiring portion is provided to be connected to the through wiring.