Semiconductor Package TIM Structure for Reliable Interconnections
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Solution Overview
Problem
The semiconductor integrated circuit (IC) industry faces challenges in processing and manufacturing complexities due to the scaling down of device feature sizes, necessitating advancements in IC fabrication to maintain efficiency and performance.
Innovation Solution
A manufacturing process involving the formation of semiconductor dies with interconnection structures, conductive layers, and encapsulation techniques, including flip-chip bonding and package structures, to enhance electrical connections and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device feature size is scaled down to increase functional density, then production efficiency and performance are improved, but processing and manufacturing complexities increase
Solution Approach 1:
The patent segments the manufacturing process into distinct stages: forming recesses in the substrate, selectively filling them with conductive material, and creating interconnection structures. This segmentation allows complex interconnections to be built through repeated application of simple, standardized steps, managing processing complexity while enabling high functional density through scaling
Solution Approach 2:
The patent transitions from planar interconnections to three-dimensional vertical interconnections by forming recesses that extend into the substrate and filling them with conductive material. This vertical dimension allows multiple interconnection levels to be stacked, increasing functional density without proportionally increasing processing complexity at each level
2Reliability
If conventional manufacturing processes are used for scaled down devices, then existing fabrication capabilities are maintained, but electrical connections and reliability deteriorate
Solution Approach 1:
The patent performs preliminary actions by pre-forming recesses in the substrate before depositing conductive material, and by pre-configuring the interconnection structure geometry. This preliminary preparation ensures proper alignment and contact between conductive elements, improving electrical connection reliability while maintaining manufacturing ease through standardized pre-fabrication steps
Solution Approach 2:
The patent introduces an intermediary conductive material layer that fills the recesses and provides reliable electrical connection between different interconnection levels. This intermediary layer acts as a mediator that ensures low-resistance contact while allowing the overall structure to be manufactured using conventional deposition and patterning techniques
Data Source
AI summary
A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.