Semiconductor Package TIM Layout for Heat Transfer and Stress Relief
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in scaling down semiconductor integrated circuits (ICs) due to increased complexities in processing and manufacturing, which require advancements in IC fabrication to maintain performance and efficiency.
Innovation Solution
The manufacturing process involves forming a semiconductor die with an interconnection structure, dielectric layers, conductive pads, and thermal interface materials, including a metallic TIM layer and a polymeric TIM layer, to enhance thermal conductivity and reduce mechanical stress, thereby improving the semiconductor package's performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device feature size is scaled down to increase functional density, then production efficiency and performance are improved, but processing and manufacturing complexity increases
Solution Approach 1:
The patent segments the semiconductor manufacturing process into distinct stages: forming recesses in the substrate, selectively filling them with different materials (first and second materials), and creating separated first and second structures. This segmentation allows complex functionality to be achieved through modular, step-by-step construction rather than attempting to create all features simultaneously, thereby managing processing complexity while maintaining high functional density
Solution Approach 2:
The patent applies local quality by creating regions with different material compositions and properties within the same semiconductor structure. The first and second structures are formed with different materials having distinct electrical, thermal, or mechanical properties, allowing each region to be optimized for its specific function while contributing to the overall device performance at scaled dimensions
2Reliability
If device feature size is scaled down to increase functional density, then performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary action by pre-forming recesses in the substrate before depositing the first and second materials. This preparatory step creates defined spaces that guide subsequent material deposition and structure formation, ensuring precise positioning and reducing variability in the final device structure. This advance planning and preparation simplify the overall manufacturing process while enabling high-performance scaled devices
Solution Approach 2:
The patent utilizes composite materials by combining first and second materials with different properties within the same semiconductor device structure. This composite approach allows the device to achieve enhanced performance characteristics through material synergies while the structured arrangement of these materials manages manufacturing complexity through repeatable deposition patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces mechanical stress and delamination issues, maintains thermal performance, and enhances the overall efficiency and reliability of the semiconductor package by controlling temperature distribution and mechanical strain.
Implementation Method 1
The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer
Implementation Method 2
The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer
Data Source
AI summary
A semiconductor package includes a substrate, a semiconductor die, a lid, and an adhesive layer. The semiconductor die is attached to the substrate. The lid is over the semiconductor die and the substrate. The adhesive layer is sandwiched between the lid and the semiconductor die. The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer. The polymeric TIM layer is located on corners of the semiconductor die from a top view.