Semiconductor Package Thermal Management via Top Die Inversion
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Solution Overview
Problem
Current semiconductor device packaging techniques often fail to adequately manage heat generated by high-power components, leading to excessive operational temperatures that can degrade performance, cause damage, or result in failure.
Innovation Solution
The semiconductor device package design positions the heat-generating die at the top of the stack, directly electrically connecting it to the substrate, and uses a heat spreader and thermal interface material to facilitate heat dissipation, while maintaining electrical connections through conductive vias and interposers, allowing for efficient thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If heat-generating die is positioned at the bottom of the stack for direct electrical connection, then electrical connection is simplified, but heat dissipation becomes inadequate leading to excessive temperatures
Solution Approach 1:
The patent inverts the conventional stacking order by positioning the heat-generating die at the top of the stack rather than at the bottom. This inversion allows the heat-generating die to be directly connected to the substrate, simplifying electrical connections while improving heat dissipation through direct thermal coupling with the substrate's heat spreader.
Solution Approach 2:
The patent introduces a thermal interface material as an intermediary between the heat-generating die and the substrate's heat spreader. This thermal interface material optimizes thermal coupling while maintaining electrical isolation where needed, enabling efficient heat transfer from the die to the substrate without compromising electrical connection simplicity.
2Productivity
If multiple layers of dice are stacked to increase capacity, then device functionality is enhanced, but heat accumulation increases leading to performance degradation
Solution Approach 1:
The patent applies local quality by positioning the heat-generating die at the top of the stack where it has direct thermal access to the substrate's heat spreader. This localized thermal management approach ensures that the region with highest heat generation receives prioritized cooling, while other layers can be optimized for different functions without compromising overall thermal performance.
Solution Approach 2:
The patent transitions from planar heat dissipation to three-dimensional thermal management by stacking dice vertically with the heat-generating die at the top. This dimensional change allows heat to be conducted directly into the substrate through the vertical stack, providing an additional thermal conduction path that efficiently removes heat from high-power components while maintaining high device capacity.
3Temperature
If thermal management techniques are added to conduct heat away, then temperature control improves, but device complexity increases
Solution Approach 1:
The patent makes the substrate multi-functional by designing it to serve both as the electrical connection platform and as the primary heat dissipation structure. The substrate's ground plane acts as both an electrical reference and a thermal spreader, eliminating the need for separate cooling structures and reducing overall package complexity while maintaining effective temperature control.
Solution Approach 2:
The patent merges the electrical connection function and thermal management function into a unified substrate design. By integrating the heat spreader with the substrate's ground plane and combining electrical vias with thermal conduction paths, the patent reduces the number of discrete components needed while achieving both electrical connectivity and effective heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces operational temperatures of both heat-generating and memory dice, maintaining them within recommended limits, thereby ensuring performance quality and reducing the risk of damage or failure.
Implementation Method 1
uses a heat spreader and thermal interface material to facilitate heat dissipation
Implementation Method 2
uses a heat spreader and thermal interface material to facilitate heat dissipation
Data Source
AI summary
Semiconductor device packages in accordance with this disclosure may include a substrate and a stack of semiconductor dice attached to the substrate. An uppermost semiconductor die of the stack of semiconductor dice located on a side of the stack of semiconductor dice opposite the substrate may be a heat-generating component configured to generate more heat than each other semiconductor die of the stack of semiconductor dice. Vias may directly electrically connect the uppermost semiconductor die to the substrate.