Semiconductor Package Sidewall Trench Cooling for High-Power Chips
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Solution Overview
Problem
As semiconductor chips increase in size, they generate high temperatures, leading to performance degradation and potential destruction of memory cells due to inadequate heat dissipation in existing semiconductor packages.
Innovation Solution
A semiconductor package design that includes a substrate with multiple semiconductor chips, a molding layer, and a heat dissipation member with trenches on the sidewalls of the chips, utilizing thermal interface material to enhance heat transfer and maintain package size without increasing thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the size of semiconductor chip is increased to implement high performance devices, then the processing power and memory capacity are improved, but the heat generation increases and the package thickness increases
Solution Approach 1:
The patent introduces a heat dissipation member with trenches that extends vertically along the sidewalls of semiconductor chips, utilizing the vertical dimension (Z-axis) for heat dissipation. This allows heat to be dissipated laterally through the sidewalls rather than only through the bottom surface, effectively adding a new dimension to the heat dissipation pathway without increasing the horizontal footprint of the package.
Solution Approach 2:
The heat dissipation member is nested within the molding layer structure, with trenches formed in the molding layer that accommodate the heat dissipation member. The heat dissipation member is positioned between the semiconductor chips and the outer surface of the molding layer, creating a nested configuration where multiple components (chips, heat dissipation member, molding layer) are integrated in a space-efficient manner.
2Power
If the size of semiconductor chip is increased, then the processing power is improved, but the package thickness increases
Solution Approach 1:
The patent utilizes the vertical sidewall surface area for heat dissipation by forming trenches in the molding layer that expose the sidewalls of semiconductor chips. This approach converts the limited horizontal heat dissipation area into a three-dimensional heat dissipation structure, allowing efficient heat removal without proportionally increasing the package thickness.
Solution Approach 2:
The molding layer is selectively removed or thinned in specific regions to form trenches, creating local variations in the molding layer thickness. This local quality change allows the heat dissipation member to access and contact the sidewalls of semiconductor chips in targeted areas, optimizing heat dissipation at critical locations without requiring uniform increases in package dimensions.
3Loss of energy
If conventional heat dissipation methods are used, then the heat dissipation is insufficient, but increasing the package size is not acceptable due to slimness tendency
Solution Approach 1:
The patent transitions from two-dimensional heat dissipation (through the bottom surface) to three-dimensional heat dissipation by utilizing the vertical sidewall surfaces. The trenches in the molding layer create exposed sidewall areas that serve as additional heat dissipation surfaces, effectively increasing the heat dissipation area without proportionally increasing the overall package volume.
Solution Approach 2:
The heat dissipation function is segmented into multiple pathways: heat can dissipate through the bottom surface of the package and through the exposed sidewalls via trenches. This segmentation of the heat dissipation function into multiple independent pathways increases overall heat dissipation efficiency without requiring a single large heat dissipation structure that would increase package size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves heat dissipation efficiency by transferring heat laterally through the sidewalls, preventing performance degradation and maintaining package size despite increased chip height, while also providing EMI shielding.
Implementation Method 1
a heat dissipation member comprising at least one trench that contacts an upper surface of the at least one semiconductor chip and another portion of the sidewall of the at least one semiconductor chip
Implementation Method 2
utilizing thermal interface material to enhance heat transfer
Data Source
AI summary
A semiconductor package includes a substrate, at least one semiconductor chip provided on an upper surface of the substrate, a molding layer provided on a portion of a sidewall of the at least one semiconductor chip, and a heat dissipation member comprising at least one trench that contacts an upper surface of the at least one semiconductor chip and another portion of the sidewall of the at least one semiconductor chip.