Semiconductor Package Heat Dissipation Member Trench Design
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Solution Overview
Problem
Existing semiconductor packages face challenges in enhancing reliability and durability due to issues with heat dissipation and warpage, particularly in the integration of thermal interface materials and underfill layers, which can lead to cracks and reduced package reliability.
Innovation Solution
A semiconductor package design incorporating a heat dissipation member with a trench structure that overlaps the gap region between chip structures, featuring a trench depth ranging from 1/3 to 2/3 of the heat dissipation member's thickness, prevents thermal interface materials from entering the gap, thereby minimizing warpage and improving reliability by ensuring proper alignment and contact within the trench.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermal interface materials are applied to chip structures, then heat dissipation is improved, but the materials may enter the gap region and cause warpage or cracks
Solution Approach 1:
The heat dissipation member is segmented by forming a trench that divides the gap region into separate sections. This segmentation prevents thermal interface materials from migrating across the gap region, eliminating the cause of warpage and cracks while maintaining heat dissipation functionality through the trench structure.
Solution Approach 2:
The trench acts as an intermediary barrier between the chip structures and the gap region. By introducing this intermediate structure, the patent prevents direct contact and potential mixing of thermal interface materials with the gap region, thereby preventing reliability issues while still allowing heat dissipation through the heat dissipation member.
2Reliability
If the trench width is larger than the gap region width, then thermal interface materials are effectively blocked, but the heat dissipation area is reduced
Solution Approach 1:
The trench is positioned locally at the gap region rather than spanning the entire heat dissipation member. This localized structure provides the necessary barrier function to prevent material intrusion while minimizing the impact on the overall heat dissipation area, as only a small portion of the heat dissipation member is occupied by the trench.
3Reliability
If the trench depth is increased to prevent material intrusion, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent specifies an optimized trench depth parameter (1/3 to 2/3 of the heat dissipation member thickness) that provides sufficient barrier function to prevent material intrusion while remaining within manufacturable limits. This parameter optimization balances reliability improvement with manufacturing ease, avoiding excessive depth that would complicate fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The trench structure effectively inhibits thermal interface materials from entering the gap region, reducing the likelihood of cracks and enhancing the reliability and yield of the semiconductor package by maintaining the integrity of the underfill and thermal interface layers.
Implementation Method 1
a heat dissipation member covering the first chip structure, the second chip structure, and the first substrate
Implementation Method 2
The heat dissipation member may include a first trench provided in an inner top surface of the heat dissipation member, and the first trench may vertically overlap with the gap region
Data Source
AI summary
A semiconductor package includes a first substrate, a first chip structure and a second chip structure spaced apart from each other on the first substrate, a gap region being defined between the first and second chip structures, and a heat dissipation member covering the first chip structure, the second chip structure, and the first substrate, the heat dissipation member including a first trench in an inner top surface of the heat dissipation member, wherein the first trench vertically overlaps with the gap region and has a width greater than a width of the gap region, and wherein the first trench vertically overlaps with at least a portion of a top surface of the first chip structure or a portion of a top surface of the second chip structure.