Semiconductor Package Layout Using TSVs and Multi-Layer Encapsulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor packaging methods face challenges in efficiently integrating multiple semiconductor devices and components with precise electrical connections and reliable encapsulation, leading to increased complexity and costs.
Innovation Solution
The method involves using a carrier with a debond layer and buffer layer for precise placement and encapsulation of integrated circuit components, through silicon vias, and conductive pillars, along with redistribution circuit structures for electrical connectivity, and multiple layers of insulating encapsulation for enhanced adhesion and thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple semiconductor devices and components are integrated with precise electrical connections and reliable encapsulation, then the performance and reliability of semiconductor packages are enhanced, but the manufacturing complexity and costs increase
Solution Approach 1:
The manufacturing process is divided into distinct stages: forming the carrier with debond and buffer layers, placing semiconductor devices and components, creating through-silicon vias, forming conductive pillars, adding redistribution circuit structures, and applying multiple encapsulation layers. Each stage is independently optimized and can be performed by separate manufacturing modules, reducing overall process complexity while achieving high reliability through systematic integration.
Solution Approach 2:
The patent employs a nested structure where semiconductor devices are placed on a carrier, then encapsulated within multiple layers of encapsulation material. Through-silicon vias and conductive pillars are nested within the semiconductor devices, and redistribution circuit structures are nested within the encapsulation layers. This nested arrangement protects internal components while maintaining electrical connectivity, enhancing reliability without proportionally increasing manufacturing complexity.
2Temperature
If multiple layers of insulating encapsulation are used for enhanced adhesion and thermal management, then the thermal management and adhesion are improved, but the device complexity increases
Solution Approach 1:
Different encapsulation layers are assigned specific functions based on their location and material properties. The first encapsulation layer provides adhesion and protection, the second layer focuses on thermal management with higher thermal conductivity, and the third layer provides final protection and planarization. This localized functional differentiation optimizes thermal management and adhesion while keeping each layer's complexity manageable through specialized material selection rather than universal multi-functionality.
Solution Approach 2:
The patent uses composite encapsulation structures where each layer may contain different material compositions optimized for specific properties. The encapsulation layers can include polymer matrices with filler materials (such as metal particles or ceramic fillers) to enhance thermal conductivity, adhesion promoters for bonding interfaces, and protective coatings for environmental resistance. These composite materials provide multiple functions within each layer, reducing the need for additional separate components and thus limiting the increase in overall device complexity.
Data Source
AI summary
A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.