Semiconductor Package Substrate With Thinned Region for TSV
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Solution Overview
Problem
Conductive wires in semiconductor package structures can negatively impact performance in high-speed or high-frequency environments due to their length, leading to increased impedance and potential structural rigidity issues during manufacturing processes.
Innovation Solution
The semiconductor package structure incorporates a substrate with a thicker first portion and a thinner second portion, where through-silicon vias (TSVs) are formed in the thinner portion to reduce the conductive path length between semiconductor devices, and a circuit is disposed on the second portion to enhance performance and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive wires are used for electrical connection in semiconductor package structures, then electrical connection is achieved, but the conductive path length increases leading to higher impedance and degraded performance in high-speed or high-frequency environments
Solution Approach 1:
The patent transitions from planar wire-based connections to three-dimensional vertical connections using through-silicon vias (TSVs). By changing the connection dimension from horizontal (wire length) to vertical (via depth), the conductive path length is significantly reduced, thereby lowering impedance and improving high-speed signal integrity without compromising electrical connection functionality
Solution Approach 2:
The patent modifies the substrate structure by creating varying thickness regions - a thinner second portion for circuit placement and a thicker first portion for structural support. This parameter change in substrate thickness enables shorter TSV conductive paths while maintaining overall package integrity, directly addressing the impedance issue in high-frequency applications
2Length of stationary object
If the substrate thickness is reduced to shorten conductive path length, then impedance is reduced for high-speed performance, but structural rigidity and resistance to damage during manufacturing processes deteriorate
Solution Approach 1:
The substrate is segmented into functionally distinct regions with different thicknesses: a thinner second portion for optimal electrical performance and a thicker first portion for mechanical strength. This segmentation allows each region to fulfill its specific function without compromising the other, enabling both short conductive paths and adequate structural rigidity
Solution Approach 2:
Different regions of the substrate are given different local qualities in terms of thickness. The second portion is locally thinned to reduce TSV length and impedance, while the first portion maintains greater thickness to provide structural support and damage resistance during manufacturing. This local quality differentiation resolves the contradiction between electrical performance and mechanical strength
Data Source
AI summary
A semiconductor package structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a substrate and a circuit. The substrate has a first portion and a second portion. A first thickness of the first portion is greater than a second thickness of the second portion. The circuit is disposed on the second portion of the substrate. The second semiconductor device is disposed on the circuit of the first semiconductor device.