Semiconductor Package Bonding With Underfill for Heat and Reliability

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Solution Overview

Problem

Conventional semiconductor packaging technologies face challenges in efficiently managing thermal dissipation, mechanical protection, and electrical connectivity for integrated circuits, particularly in achieving reliable die-to-die and die-to-substrate bonds.

Innovation Solution

The method involves bonding semiconductor die to an interposer wafer or packaging substrate using a die-to-interposer-wafer or die-to-packaging-substrate first bond, applying underfill materials, and encapsulating with a mold material to enhance thermal conductivity and mechanical stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional semiconductor packaging is used, then basic protection is provided, but thermal dissipation efficiency is insufficient

Engineering Contradiction:

Improvethermal dissipation efficiencyVSAvoidpackaging structure complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The packaging structure is segmented into multiple functional layers including interposer wafer, underfill material, mold material, and thermal management components. This segmentation allows each layer to be optimized for specific functions including thermal dissipation, while maintaining overall structural integrity and enabling modular manufacturing processes.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent employs composite materials strategy by combining interposer wafer (ceramic or organic substrate), underfill material (epoxy-based adhesive), and mold material (polymer compound) to create a multi-material packaging structure. Each material is selected for its specific thermal, mechanical, and electrical properties, achieving superior thermal dissipation while providing mechanical protection and electrical isolation.

Inventive Principle:

Principle #40Composite materials

2Reliability

If die-to-die bonding is implemented, then electrical connectivity is improved, but bonding reliability becomes challenging

Engineering Contradiction:

Improvebonding reliabilityVSAvoidbonding process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The interposer wafer serves as an intermediary component between semiconductor dies, providing a stable bonding surface with controlled impedance and signal routing. This intermediary structure simplifies the bonding process by establishing reliable electrical and mechanical connections before final die attachment, thereby improving bonding reliability while managing process complexity through standardized interposer interfaces.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If interposer wafer is used, then electrical connectivity is enhanced, but manufacturing complexity increases

Engineering Contradiction:

Improveelectrical connectivityVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The interposer wafer is prepared in advance with pre-formed bonding pads, through-silicon vias, and signal traces before die attachment. This preliminary preparation of the interposer wafer allows for optimized electrical connectivity design and simplifies the subsequent die bonding process, as the interposer serves as a pre-configured interconnection platform that reduces manufacturing steps and improves yield.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves thermal management, mechanical robustness, and electrical connectivity, enabling more efficient heat dissipation and reliable bonding between semiconductor die and substrates, thus enhancing the performance and reliability of semiconductor device packages.

Implementation Method 1

applying underfill materials, and encapsulating with a mold material to enhance thermal conductivity

Methodology Applied

Scientific EffectThermal conductivity: Conduction (thermal)

Implementation Method 2

bonding semiconductor die to an interposer wafer or packaging substrate using a die-to-interposer-wafer or die-to-packaging-substrate first bond

Methodology Applied

Scientific EffectBonding: Welding

Data Source

PatentUS20250038042A1Semiconductor device package and manufacturing method thereof

Publication Date: 2025.01.30 AMKOR TECH SINGAPORE HLDG PTE LTD

AI summary

Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.