Semiconductor Package Trench Layout for Void-Free Underfill Flow
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multifunctional semiconductor devices requires higher integration levels, necessitating the implementation of fine-patterned semiconductor devices with narrow widths and close spacing, which poses challenges in manufacturing and packaging.
Innovation Solution
A semiconductor package design featuring a substrate with a first trench structure and a second trench structure surrounding a semiconductor chip, where the trench structures include line patterns and hole patterns that guide the underfill material effectively, ensuring proper filling and preventing voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If fine-patterned semiconductor devices with narrow widths and close spacing are implemented to achieve high integration, then the degree of integration of semiconductor devices is improved, but the manufacturing precision and reliability of the package structure deteriorate
Solution Approach 1:
The package structure is segmented into distinct regions through trench structures that divide the substrate into multiple sections. These trenches create isolated zones around semiconductor chips, allowing independent handling and filling processes for each region, thereby maintaining precision in high-integration configurations.
Solution Approach 2:
Different regions of the substrate are assigned different structural characteristics through selectively formed trench structures. The trenches are positioned specifically around semiconductor chips with varying integration densities, providing localized structural support and control where needed most, rather than uniform treatment across the entire substrate.
2Reliability
If trench structures with varying horizontal widths are formed to guide underfill material effectively, then the filling completeness is improved, but the device complexity increases
Solution Approach 1:
The trench structures employ asymmetric width design where the horizontal width of trenches varies depending on their position and function. Wider trenches are formed in regions requiring greater underfill volume or flow control, while narrower trenches suffice in other areas, optimizing filling effectiveness without uniform complexity throughout.
Solution Approach 2:
The trench structures utilize dimensional variation by forming trenches with different horizontal widths across the substrate plane. This dimensional diversity in the trench geometry provides additional control over underfill material flow and distribution, enabling effective filling of complex package structures through geometric variation rather than increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the integration and performance of semiconductor devices by ensuring complete filling of the trench structures with underfill material, preventing voids, and maintaining the integrity of the semiconductor chip and substrate interface.
Implementation Method 1
an underfill filling a space between the substrate and the semiconductor chip
Data Source
AI summary
A semiconductor package includes a substrate defining a first trench structure and a second trench structure in an upper surface of the substrate; a semiconductor chip on the substrate; and an underfill filling a space between the substrate and the semiconductor chip. The first trench structure and the second trench structure surround the semiconductor chip. The first trench structure includes at least one first line pattern extending along at least one side surface of the semiconductor chip. The second trench structure includes at least one second line pattern extending along at least one other side surface of the semiconductor chip. A horizontal width of the at least one first line pattern is greater than a horizontal width of the at least one second line pattern.