Semiconductor Package Routing with Encapsulated Vertical Vias

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving reliable and compact packaging solutions due to the limitations of existing integrated fan-out packages, which struggle with routing capability and reliability as feature sizes decrease, necessitating innovative manufacturing methods for efficient semiconductor package production.

Innovation Solution

A wafer-level packaging method involving a carrier with a debond layer and buffer layer, where a redistribution structure with polymer dielectric and metallization layers is formed, and semiconductor dies are attached with through vias and encapsulated, followed by planarization and additional redistribution sublayers, eliminating the need for a seed layer between metallization and conductive vias to enhance adhesion and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If integrated fan-out packages are used to achieve compactness, then area usage is reduced, but routing capability and reliability deteriorate

Engineering Contradiction:
Improvepackage areaVSAvoidrouting capability and reliability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent transitions from planar routing to three-dimensional vertical routing by forming conductive vias through the encapsulant material. This allows electrical connections to be established in the vertical dimension rather than relying solely on horizontal routing, thereby improving routing capability while maintaining compact package area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a multi-layered structure where redistribution layers, conductive vias, and encapsulant materials are nested within each other. The conductive vias are embedded within the encapsulant, and redistribution layers are positioned at different heights, creating a nested configuration that maximizes routing density in a compact volume.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Productivity

If feature size is reduced to increase integration density, then more components can be integrated, but manufacturing complexity and difficulty increase

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The manufacturing process is divided into distinct sequential steps: forming the encapsulant material, creating conductive vias through the encapsulant, depositing redistribution layers, and forming additional conductive structures. This segmentation allows each step to be optimized independently and simplifies the overall manufacturing process despite the high integration density achieved.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If conventional packaging methods are used, then manufacturing process is simpler, but adhesion and structural integrity are insufficient

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidadhesion and structural integrity
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The patent employs composite material structures combining the encapsulant material with conductive vias and redistribution layers. The encapsulant serves as both a structural matrix and an adhesive medium, while the conductive materials are integrated within this matrix, creating a composite structure with enhanced adhesion and structural integrity compared to conventional packaging methods.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS11848233B2Semiconductor package and manufacturing method thereof
Publication Date: 2023.12.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11848233B2 patent drawing
  • US11848233B2 patent drawing
  • US11848233B2 patent drawing

AI summary

A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.