Semiconductor Package Structure for Via Warpage Prevention
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Solution Overview
Problem
High-performance semiconductor packages face warpage and deterioration issues in the region where vias are disposed, affecting the manufacturing process and electrical reliability.
Innovation Solution
Incorporating a dummy semiconductor chip with silicon and a capacitor within the molding layer, which includes a through-via to prevent warpage and enhance electrical connectivity, thereby improving the structural integrity and reliability of the semiconductor package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a via is disposed in the mold layer to electrically connect lower and upper structures, then electrical connectivity is improved, but the region becomes vulnerable to warpage and via deterioration
Solution Approach 1:
A dummy semiconductor chip is introduced as an intermediary structure between the mold layer and the via. This dummy chip includes a via hole that receives the via, providing structural support and preventing warpage while maintaining electrical connectivity. The dummy chip acts as a mediator that protects the via from deterioration without interfering with its electrical function.
Solution Approach 2:
The solution employs a composite structure combining the mold layer, dummy semiconductor chip, and via in an integrated manner. The dummy chip is formed with specific material properties that complement the mold layer, creating a composite system that enhances mechanical strength and prevents warpage while maintaining the electrical connectivity function of the via.
2Strength
If the dummy semiconductor chip is added to prevent via warpage, then structural integrity is improved, but device complexity increases
Solution Approach 1:
The dummy semiconductor chip serves multiple functions simultaneously: it provides structural support to prevent via warpage, offers mechanical protection to the via, and maintains electrical connectivity through its via hole. By combining these functions in a single component, the overall device complexity is minimized while achieving the desired structural integrity.
3Reliability
If capacitors are disposed in the dummy semiconductor chip, then electrical reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The capacitors are merged with the dummy semiconductor chip structure, forming an integrated component. The capacitors are disposed within the dummy chip and electrically connected through the via hole, combining the mechanical support function of the dummy chip with the electrical function of the capacitors in a single integrated structure, thereby simplifying the overall manufacturing process.
Data Source
AI summary
An example semiconductor package includes a structure, a first semiconductor chip disposed on an upper surface of the structure and electrically connected to the structure, a dummy semiconductor chip disposed on and contacting the upper surface of the structure, a molding layer surrounding a sidewall of the first semiconductor chip and a sidewall of the dummy semiconductor chip on the upper surface of the structure, a redistribution layer disposed on an upper surface of the first semiconductor chip, an upper surface of the dummy semiconductor chip, and an upper surface of the molding layer, a first through-via extending through the molding layer in a vertical direction and electrically connecting the structure and the redistribution layer, a second through-via extending through the dummy semiconductor chip in the vertical direction and electrically connecting the structure and the redistribution layer, and a capacitor disposed inside the dummy semiconductor chip.


