Semiconductor Package Voids for Bonding Reliability

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Solution Overview

Problem

Current semiconductor packages face challenges in achieving reliable bonding between connection conductors and pads due to limitations in miniaturization and weight reduction, leading to instability and potential connection failures.

Innovation Solution

Incorporating non-conductive films with strategically distributed voids between semiconductor chips, which undergo volume shrinkage during pressure bonding, ensuring a stable connection between upper and lower connection pads through the use of connection conductors like solder, and employing a molding member to enhance bonding strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor packages are miniaturized and lightweight to meet user requirements, then device size and weight are reduced, but bonding reliability between connection conductors and pads deteriorates

Engineering Contradiction:
Improvepackage sizeVSAvoidbonding reliability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The non-conductive film is designed with a porous structure containing voids having a volume fraction of 0.1 to 5 vol%. These voids allow the film to undergo controlled volume shrinkage during pressure bonding, improving contact between the connection conductor and pad while maintaining bonding reliability in miniaturized packages

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The invention changes the physical parameters of the non-conductive film by controlling void size (1 μm to 100 μm average diameter) and volume fraction (0.1 to 5 vol%). During pressure bonding, these parameter changes enable the film to shrink and improve bonding pressure distribution, ensuring reliable connections in compact packages

Inventive Principle:
Principle #35Parameter changes

2Reliability

If non-conductive films with voids are used to improve bonding reliability, then connection stability improves, but manufacturing complexity increases

Engineering Contradiction:
Improveconnection stabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The void characteristics (size, distribution, volume fraction) are controlled within specific ranges during film formation. This parameter control achieves reliable bonding without requiring complex post-processing, as the voids naturally collapse during pressure bonding to improve contact

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the reliability and bonding strength of semiconductor packages by maintaining a stable connection between conductors and pads, preventing overflow and ensuring efficient heat dissipation, thus enhancing the overall performance and durability of the semiconductor package.

Implementation Method 1

Incorporating non-conductive films with strategically distributed voids between semiconductor chips, which undergo volume shrinkage during pressure bonding

Methodology Applied
Scientific EffectPressure bonding: Compression

Data Source

PatentUS11676925B2Semiconductor packages having improved reliability in bonds between connection conductors and pads and methods of manufacturing the same
Publication Date: 2023.06.13 SAMSUNG ELECTRONICS CO LTD
  • US11676925B2 patent drawing
  • US11676925B2 patent drawing
  • US11676925B2 patent drawing

AI summary

A semiconductor package includes a first semiconductor chip having a through-electrode and an upper connection pad on an upper surface of the first semiconductor chip that is connected to the through-electrode; a second semiconductor chip stacked on the first semiconductor chip, and having a lower connection pad on a lower surface of the second semiconductor chip; a non-conductive film between the first semiconductor chip and the second semiconductor chip, with the non-conductive film including voids having an average diameter of 1 μm to 100 μm, the voids having a volume fraction of 0.1 to 5 vol %; and a connection conductor that penetrates the non-conductive film and connects the upper connection pad and the lower connection pad.