Stepped Semiconductor Package Structure for Low-Chip Wafer Separation
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in efficiently packaging and connecting semiconductor devices, particularly in achieving reliable electrical connections and mechanical strength while minimizing damage during cutting processes.
Innovation Solution
The proposed solution involves a method of manufacturing semiconductor devices that includes forming a substrate with a specific step-form profile, creating interconnect structures and conductive vias, and using a wafer-level packaging process that involves cutting trenches to separate individual semiconductor devices while minimizing chipping and damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cutting processes are used to separate semiconductor devices, then manufacturing simplicity is maintained, but chipping and damage occur during cutting
Solution Approach 1:
The patent applies preliminary action by forming a relief groove at the cutting location before performing the cutting operation. This groove is created in advance to guide the cutting tool and prevent chipping, ensuring that the cut occurs precisely at the intended location without damaging the semiconductor device structure.
Solution Approach 2:
The relief groove acts as an intermediary structure between the cutting tool and the semiconductor device. It serves as a mediator that absorbs and redirects cutting forces, preventing direct transmission of harmful stresses to the device edges and thereby reducing chipping and damage during separation.
2Productivity
If wafer-level packaging is implemented to improve efficiency, then productivity increases, but process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the wafer into multiple semiconductor devices with individual relief grooves at each cutting location. This allows parallel processing of multiple devices while maintaining simple, standardized procedures for each unit, thereby increasing productivity without proportionally increasing overall process complexity.
Solution Approach 2:
The relief grooves are formed in advance during the wafer fabrication process before packaging operations. This preliminary action integrates the cutting preparation into existing manufacturing flows, enabling wafer-level packaging efficiency without requiring separate complex preparation steps for each device.
3Manufacturing precision
If multiple cutting steps are performed to separate devices, then manufacturing precision improves, but loss of time increases
Solution Approach 1:
The relief groove is formed in advance at the precise cutting location, eliminating the need for multiple alignment and cutting steps. This preliminary positioning structure enables single-step precise cutting, thereby maintaining high manufacturing precision while significantly reducing the time required for device separation.
Solution Approach 2:
The patent replaces complex multi-step mechanical cutting alignment systems with a pre-formed geometric guide structure (relief groove). This substitution eliminates repeated positioning and adjustment operations, achieving high precision separation in a single cutting pass and reducing overall processing time.
Data Source
AI summary
A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.