Semiconductor Package Warpage Control via Differential Adhesion
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Solution Overview
Problem
The warpage phenomenon in semiconductor package intermediate structures due to thermal expansion coefficient differences between components is not effectively addressed in existing manufacturing processes, leading to manufacturing challenges.
Innovation Solution
A method involving a carrier substrate with an adhesion layer having different adhesion strengths in specific areas is used to support the package intermediate structure, where the element areas are adjacent to areas with a lower adhesion strength and the dummy areas are adjacent to areas with a higher adhesion strength, allowing for reduced warpage during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a uniform adhesion layer is used to support the package intermediate structure, then the structure can be held during processing, but warpage occurs due to thermal expansion coefficient differences between components
Solution Approach 1:
The adhesion layer is designed with spatially varying adhesion strengths, where different regions have different bonding forces to the package intermediate structure. This local differentiation allows the layer to provide support where needed while accommodating thermal expansion differences in other areas, thereby preventing warpage during temperature changes in the manufacturing process.
2Stability of the object's composition
If the adhesion layer has high adhesion strength across the entire surface, then the package intermediate structure is firmly supported, but residue formation occurs during separation
Solution Approach 1:
The adhesion layer exhibits locally differentiated adhesion strength: high adhesion in regions requiring firm support during processing, and low adhesion in regions where clean separation is needed. This spatial variation ensures both stable support during manufacturing and residue-free separation, eliminating the harmful effect of residue formation.
3Object-generated harmful factors
If the adhesion layer has low adhesion strength across the entire surface, then residue formation is minimized, but the package intermediate structure cannot be adequately supported during processing
Solution Approach 1:
The adhesion layer is engineered with region-specific adhesion characteristics: low adhesion strength in areas where minimal residue is critical, and high adhesion strength in areas where structural support is essential. This localized optimization simultaneously achieves both low residue formation and adequate support stability during processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses warpage during semiconductor package manufacturing, enabling easier handling and processing while maintaining thermal stability and preventing residue formation.
Implementation Method 1
a warpage phenomenon in which the package intermediate structure is bent may occur due to a difference in a thermal expansion coefficient between individual components of the package intermediate structure
Implementation Method 2
A partial area of the photosensitive film is exposed to UV light to form an adhesion layer including a first area including the exposed area of the photosensitive film and a second area including a non-exposed area of the photosensitive film
Data Source
AI summary
To manufacture a semiconductor package, a package intermediate structure having an element area and a dummy area is formed. A carrier substrate including an adhesion layer is formed. The adhesion layer includes a first area with a first adhesion strength and a second area with a second adhesion strength that is different from the first adhesion strength. The package intermediate structure is supported by the carrier substrate so that the element area is adjacent the first area and the dummy area is adjacent the second area. The package intermediate structure is processed while the package intermediate structure is supported by the carrier substrate.