High Frequency Semiconductor Package Warpage Reduction
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Solution Overview
Problem
High frequency semiconductor packages warp due to the difference in linear expansion coefficients between metal and ceramic materials, affecting heat dissipation and package integrity, especially when multiple semiconductor elements are cascaded.
Innovation Solution
A high frequency semiconductor device package design featuring a ceramic frame body with sintered first and second frame parts, a metal plate, and conductive layers with orthogonal lead parts and stripe patterns, allowing for hermetic sealing and flexible layout without elongating the chip shape, which reduces warpage and enhances bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the package is shaped like a square to reduce warpage, then the package warpage is reduced, but the package must be elongated to accommodate multiple cascaded semiconductor elements
Solution Approach 1:
The package is divided into multiple identical modular units, each containing a semiconductor element. These modular units are arranged in a compact configuration rather than a linear elongated arrangement, allowing multiple elements to be accommodated without increasing overall package length excessively.
Solution Approach 2:
Multiple semiconductor elements are arranged in a nested or compact layout within the package body, where elements are positioned in a space-efficient manner that minimizes the elongation of the package while still allowing signal transmission between cascaded elements.
2Quantity of substance
If the package is elongated to accommodate more cascaded semiconductor elements, then the number of elements is increased, but the package warpage increases due to difference in linear expansion coefficient between metal plate and ceramic frame body
Solution Approach 1:
The package utilizes a composite structure combining metal plate and ceramic frame body with optimized geometry. The specific shape design of the package body compensates for the differential thermal expansion between dissimilar materials, reducing warpage even when multiple elements are cascaded.
Solution Approach 2:
The package geometry parameters (shape, dimensions, thickness distribution) are optimized to compensate for thermal expansion differences. By adjusting these parameters, the package maintains structural stability and minimizes warpage while accommodating the required number of semiconductor elements.
3Quantity of substance
If the package is elongated to cascade more semiconductor elements, then the number of elements is increased, but the heat dissipation performance deteriorates
Solution Approach 1:
Instead of arranging semiconductor elements in a linear elongated configuration, the elements are arranged in a two-dimensional compact layout. This dimensional change allows multiple elements to be cascaded while maintaining a compact package footprint and improving heat dissipation by reducing thermal path length to the metal plate heat sink.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves heat dissipation, reduces package warpage, and maintains high flexibility in layout, enabling effective thermal management and robust packaging for high frequency semiconductor devices.
Implementation Method 1
The first frame part and the second frame part are sintered
Implementation Method 2
Heat dissipation performance of a high frequency semiconductor element such as HEMT (high electron mobility transistor) is improved when bonded onto a metal plate
Implementation Method 3
the package warps due to the difference in linear expansion coefficient between the metal plate and the ceramic frame body
Data Source
AI summary
A high frequency semiconductor device package includes a metal plate, a frame body, a first lead part, a second lead part, a first conductive layer, and a second conductive layer. The frame body includes a first frame part made and a second frame part. The first frame part has a lower surface bonded to the metal plate. The first frame part has an upper surface including a first region and a second region. The first lead part protrudes outward along a line passing through a central part of the first region and a central part of the second region in plan view. The second lead part protrudes outward along the line in plan view. The first conductive layer includes a first stripe part and a first connection part. The second conductive layer includes a second stripe part and a second connection part.


