High-Frequency Semiconductor Package with Wire Isolation Wall
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Solution Overview
Problem
The existing high-frequency semiconductor packages face challenges in achieving sufficient isolation between input and output feedthroughs due to insufficient isolation distance, which affects high-frequency characteristics, and the size increase of semiconductor chips shifts the spatial resonant frequency to lower frequencies, necessitating a dedicated design for the isolation wall, thereby increasing manufacturing costs.
Innovation Solution
A high-frequency semiconductor package design that includes a metal plate, a substrate with openings, a semiconductor chip, input and output feedthroughs, a metal seal ring, a conductive cap, and isolation metal wires that form an isolation wall to electromagnetically shield the package, allowing flexible positioning and reducing the need for a dedicated design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation wall is provided to ensure isolation distance between input and output feedthroughs, then isolation characteristics are improved, but manufacturing cost increases due to dedicated design requirements
Solution Approach 1:
The conductive cap serves multiple functions: it acts as an electromagnetic shield for the semiconductor chip, provides a mounting surface for the isolation metal wire, and forms part of the grounded shielding structure. This multi-functionality eliminates the need for separate dedicated isolation wall structures, reducing manufacturing complexity and cost while maintaining excellent isolation characteristics between input and output feedthroughs.
Solution Approach 2:
The isolation distance is dynamically adjusted by changing the position where the isolation metal wire contacts the conductive cap. By varying this contact position parameter, the isolation wall can be optimized for different chip sizes and package configurations without requiring dedicated designs, thereby maintaining both isolation performance and manufacturing efficiency.
2Volume of moving object
If the size of the semiconductor chip is increased, then integration capacity is improved, but spatial resonant frequency shifts to lower frequencies affecting desired frequency performance
Solution Approach 1:
The conductive cap acts as an intermediary electromagnetic shielding structure between the semiconductor chip and the package cavity. By providing this intermediate shield that can be grounded through the isolation metal wire, the package maintains controlled impedance and stable resonant frequency characteristics even when the chip size varies, preventing unwanted frequency shifts and maintaining desired frequency performance.
3Reliability
If the isolation distance between input and output feedthroughs is increased, then isolation characteristics are improved, but package size increases
Solution Approach 1:
The isolation wall is implemented as a thin metal wire structure that provides effective electromagnetic isolation between input and output feedthroughs without occupying significant space. This thin-film approach to isolation allows excellent isolation characteristics to be achieved while minimizing the increase in package dimensions, as the isolation structure adds minimal volume compared to traditional bulk isolation walls.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design ensures excellent isolation characteristics and reduces manufacturing costs by allowing flexible placement of isolation metal wires during wire bonding, maintaining package versatility and shifting the spatial resonant frequency to higher frequencies.
Implementation Method 1
the metal plate, the through-hole of the substrate, the metal seal ring, and the conductive cap are electrically connected to one another to constitute common GND. Therefore, the inner space surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap are electromagnetically shielded.
Implementation Method 2
The isolation metal wire constitutes an isolation wall that partitions the inner space into the region including the input feedthrough and the region including the output feedthrough. Therefore, the region on the input side and the region on the output side are separated in terms of high frequency, thus enabling excellent isolation characteristics to be ensured.
Data Source
AI summary
An input feedthrough (8) and an output feedthrough (9) provided on the substrate (3) are wire-connected to an input pad (5) and an output pad (6) of the semiconductor chip (4) respectively. A metal seal ring (12) is provided on the substrate (3) is electrically connected to the metal plate (1) by a through-hole (15). A conductive cap (14) is bonded to the metal seal ring (12) and covers a place above the semiconductor chip (4). Both ends of an isolation metal wire (13) are electrically connected to the metal plate (1) and a loop comes into contact with a lower surface of the conductive cap (14). The isolation metal wire (13) constitutes an isolation wall partitioning an inner space into a region including the input feedthrough (8) and a region including the output feedthrough (9).