Three-Layer Semiconductor Packaging Against Ion Penetration
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Solution Overview
Problem
Transient semiconductor devices are susceptible to damage from environmental exposure, such as water and biofluids, leading to instability and reduced service life, and existing package structures like silicone, ceramics, and titanium alloys have limitations in terms of durability and ion penetration resistance.
Innovation Solution
A three-layer film package structure comprising a first SiO2 film formed by thermal oxidation, a Si3N4 film by low pressure chemical vapor deposition, and a second SiO2 film by low temperature atomic layer deposition, providing enhanced resistance to ion penetration and hydrolysis while maintaining flexibility and biocompatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-layer package structure (silicone, ceramic, or titanium alloy) is used, then the device can be manufactured with simpler process, but the resistance to ion penetration and hydrolysis is insufficient
Solution Approach 1:
The patent employs a composite package structure consisting of three distinct layers: a first SiO2 film layer, a Si3N4 film layer, and a second SiO2 film layer. Each layer contributes different protective properties, with the Si3N4 layer providing barrier function against ion penetration and the SiO2 layers providing hydrolysis resistance. This composite structure resolves the contradiction by achieving superior reliability through material combination rather than relying on a single material's limitations.
Solution Approach 2:
The package structure is divided into three functional layers with distinct roles. The first SiO2 film serves as a protective layer, the Si3N4 film acts as the primary barrier against ion penetration, and the second SiO2 film provides additional hydrolysis resistance. This segmentation allows each layer to be optimized for its specific function, achieving comprehensive protection that a single-layer structure cannot provide.
2Reliability
If the package structure thickness is increased to improve protection, then the resistance to environmental damage is improved, but the flexibility and biocompatibility are reduced
Solution Approach 1:
The patent utilizes thin film technology to create a protective package structure that maintains flexibility. The three-layer film structure is deposited as thin coatings on the semiconductor device, providing comprehensive environmental protection while preserving the flexibility needed for implantable applications. The thin film approach avoids the rigidity associated with thicker conventional packaging materials.
Solution Approach 2:
The composite three-layer structure achieves enhanced protection per unit thickness compared to single-layer structures. The synergistic combination of SiO2 and Si3N4 layers provides superior barrier properties and hydrolysis resistance in a compact configuration, maintaining flexibility while improving reliability.
3Reliability
If conventional packaging materials (silicone, ceramic, titanium alloy) are used, then the manufacturing process is simpler, but the airtightness and durability are insufficient
Solution Approach 1:
The patent replaces conventional mechanical packaging materials (silicone, ceramic, titanium alloy) with vapor-deposited film structures. The SiO2 and Si3N4 films are deposited using chemical vapor deposition (CVD) processes, creating a hermetic seal that provides superior airtightness and durability. This substitution transitions from mechanical assembly to a more integrated film-based packaging approach.
Solution Approach 2:
The patent changes the fundamental parameters of the packaging approach by using thin film deposition techniques rather than conventional material assembly. The film thickness, composition ratio, and deposition conditions are optimized to achieve the desired protection level. This parameter-driven approach enables precise control over the package structure's protective properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The three-layer film structure significantly improves the stability and lifespan of semiconductor devices by reducing hydrolysis rates and ion diffusion, enabling long-term implantation or controlled degradation, with a thickness that balances flexibility and protection, maintaining threshold voltage stability for extended periods.
Implementation Method 1
growing a first SiO2 film on a silicon wafer by a thermal oxidation process
Implementation Method 2
growing a Si3N4 film on the first SiO2 film by a low pressure chemical vapor deposition process
Implementation Method 3
growing a second SiO2 film on the Si3N4 film by a low temperature atomic layer deposition process
Data Source
AI summary
This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.