Semiconductor Pad Concavity Resin Adhesion
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Solution Overview
Problem
Conventional semiconductor devices with metal external electrode pads exhibit low adhesive properties to sealing resin, leading to peeling issues under mechanical or heat stress.
Innovation Solution
A semiconductor device design featuring an external electrode pad with a concave portion on one surface, allowing the resin layer to enter and engage with the pad, enhancing the interface adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an external electrode pad is formed with metal such as Cu, then the pad has good electrical conductivity, but the pad has low adhesive properties to the sealing resin
Solution Approach 1:
The invention applies curvature by forming a concave portion (curved surface) on the surface of the external electrode pad that contacts the sealing resin. This curved geometry increases the contact area and mechanical interlocking between the pad and resin, thereby improving adhesive properties and preventing peeling off under mechanical or heat stress while maintaining the metal pad's electrical conductivity
2Reliability
If the other surface of the external electrode pad is flat, then the manufacturing process is simple, but peeling off occurs on the interface between the pad and resin layer under stress
Solution Approach 1:
The concave portion introduces a curved surface geometry to the otherwise flat pad surface. This curvature increases the interface area and mechanical engagement with the resin layer, significantly improving adhesion and preventing peeling under stress, while the overall pad structure remains relatively simple to manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration significantly reduces peeling off between the external electrode pad and resin layer, ensuring high reliability in junctions and connections, even under stress conditions.
Implementation Method 1
a concave portion is provided in the other surface of the external electrode pad, and a resin composing the resin layer enters into the concave portion
Data Source
AI summary
A semiconductor device 1 is a semiconductor device of the BGA type, and includes a semiconductor chip 10, a resin layer 20, an insulating layer 30, and an external electrode pad 40. The resin layer 20 is constituted by a sealing resin 22 and an underfill resin 24, and covers the semiconductor chip 10. The insulating layer 30 is formed on the resin layer 20. The external electrode pad 40 is formed in the insulating layer 30. This external electrode pad 40 extends through the insulating layer 30. One surface S1 of the external electrode pad 40 is exposed in the surface of the insulating layer 30, and the other surface S2 is located in the resin layer 20. A concave portion 45 is formed in the surface S2 of the external electrode pad 40. The resin composing the resin layer 20 enters into the concave portion 45.