Semiconductor Pad Layout for Creepage Discharge Suppression
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Solution Overview
Problem
Existing semiconductor devices face challenges in suppressing creeping discharges and deterioration of insulating layers due to the proximity of high and low potential conductive layers, leading to reliability issues.
Innovation Solution
A semiconductor device design featuring a semiconductor chip with a first conductive layer at a lower potential and a second conductive layer at a higher potential, separated by an insulating layer, with a pad configuration that increases the creepage distance between them, thereby reducing the occurrence of creeping discharges and protecting the insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the first pad is formed in a region opposing the second conductive layer to reduce device area, then the device area is reduced, but creeping discharges occur between the high and low potential conductive layers
Solution Approach 1:
The pad region is displaced from the vertical projection overlap (2D opposing relationship) to a lateral separation arrangement. By changing the spatial dimension of pad placement from directly opposing to laterally separated, the creepage distance is increased while maintaining compact device area, thus resolving the contradiction between area reduction and creeping discharge resistance.
2Reliability
If the first pad is positioned close to the second conductive layer to improve electrical connection, then the electrical connection is improved, but the insulating layer deteriorates due to creeping discharges
Solution Approach 1:
The insulating layer is enhanced with a protective structure that acts as an intermediary barrier between the first pad (low potential) and the second conductive layer (high potential). This intermediary structure increases the creepage distance and prevents harmful creeping discharges from reaching the insulating layer, thereby protecting it from deterioration while maintaining reliable electrical connections.
3Reliability
If the creepage distance between high and low potential conductive layers is increased to suppress creeping discharges, then the creeping discharge resistance is improved, but the device area increases
Solution Approach 1:
Instead of increasing creepage distance in the vertical direction (which would increase device thickness and area), the design utilizes lateral separation in the horizontal plane. The first pad is positioned in a region separated in the first direction from the region opposing the second conductive layer, effectively increasing creepage distance through dimensional reconfiguration rather than simple expansion.
Data Source
AI summary
A semiconductor device includes a semiconductor chip that has a principal surface, a first conductive layer that is formed on the principal surface of the semiconductor chip and connected to a first potential, a second conductive layer that opposes the first conductive layer of the principal surface in a normal direction and is connected to a second potential higher than the first potential, an insulating layer that is formed between the first conductive layer and the second conductive layer, and a first pad that is formed in a region separated from a region that opposes the second conductive layer in a first direction in a plan view when the semiconductor chip is viewed in the normal direction and that is electrically connected to the first conductive layer.