Semiconductor Pad Metallization for High-Current Heat Dissipation
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Solution Overview
Problem
Semiconductor devices generate excessive heat when large currents flow due to high local current density at the conductive layer, and increasing the thickness of the conductive layer alone does not effectively suppress heat generation.
Innovation Solution
The semiconductor device incorporates a second conductive layer with higher thermal conductivity and lower resistivity than the first layer, formed in a region inside the end edge of the first layer, and may include fins or a conductive thin film to enhance heat dissipation and disperse current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a large current flows through the semiconductor device via the pad, then the current carrying capacity is sufficient, but the semiconductor device generates excessive heat
Solution Approach 1:
The patent applies local quality by creating a second conductive layer with different material properties (higher thermal conductivity and lower resistivity) than the first conductive layer. This second layer is strategically formed only in the region inside the end edge of the first conductive layer, providing localized enhancement of heat dissipation and current distribution exactly where the pad experiences highest current density and heat generation, without modifying the entire conductive layer structure.
2Power
If the thickness of the conductive layer is increased to reduce resistance, then the current carrying capacity improves, but the heat dissipation effectiveness does not significantly improve
Solution Approach 1:
The patent employs composite materials by combining two different conductive layers with distinct material properties. The first conductive layer provides the base conductive structure, while the second conductive layer, formed with higher thermal conductivity and lower resistivity materials, is superimposed in the critical heat generation region. This composite structure synergistically improves both current carrying capacity and heat dissipation effectiveness, overcoming the limitation of simply increasing the thickness of a single uniform conductive layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation, reduces heat generation, and disperses current density, effectively suppressing heat buildup in the semiconductor device.
Implementation Method 1
a thermal conductivity of the second conductive layer is larger than a thermal conductivity of the first conductive layer
Implementation Method 2
a resistivity of the second conductive layer is smaller than a resistivity of the first conductive layer
Data Source
AI summary
According to one embodiment, a semiconductor device includes: a semiconductor substrate having an upper surface and a lower surface; a first conductive layer formed above the semiconductor substrate; and a second conductive layer formed on the upper surface of the first conductive layer, in which, when viewed from above, the second conductive layer is formed in a region inside an end edge of the first conductive layer, the thickness of the second conductive layer is larger than the thickness of the first conductive layer, the thermal conductivity of the second conductive layer is larger than the thermal conductivity of the first conductive layer, and the resistivity of the second conductive layer is smaller than the resistivity of the first conductive layer.