Semiconductor Pad Patterns with Punch Prevention Structures
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Solution Overview
Problem
Three-dimensional semiconductor devices face structural defects and reliability issues due to seam generation in conductive patterns, leading to operational malfunctions.
Innovation Solution
The semiconductor device incorporates interlayer insulating films with stepped structures, slit divisions, line patterns, pad patterns, and punch prevention patterns to prevent punch-through phenomena during contact plug formation, ensuring electrical isolation and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive patterns are formed in three-dimensional semiconductor devices, then electrical connectivity between stacked memory cells is achieved, but seams are generated causing structural defects and reliability degradation
Solution Approach 1:
The conductive pattern formation process is segmented into multiple stages: forming conductive patterns in first interlayer insulating films, then forming additional conductive patterns in second interlayer insulating films. This segmentation prevents seam generation by avoiding continuous conductive pattern formation across all layers at once, thereby resolving the contradiction between achieving electrical connectivity and preventing manufacturing defects.
2Reliability
If contact plugs are formed to connect conductive patterns, then electrical connectivity is established, but punch-through phenomena occur compromising device stability
Solution Approach 1:
Punch prevention patterns are formed in advance before contact plug formation. These pre-formed patterns serve as protective barriers that prevent punch-through phenomena during subsequent contact plug fabrication, ensuring both electrical connectivity and device stability without compromising either aspect.
Solution Approach 2:
Punch prevention patterns act as intermediary protective structures between the contact plugs and the underlying conductive patterns. These intermediaries prevent direct harmful interaction (punch-through) while allowing the desired electrical connectivity to be established, thus resolving the contradiction between connectivity and stability.
3Productivity
If interlayer insulating films are stacked to increase integration density, then three-dimensional structure is achieved, but seam generation in conductive patterns occurs
Solution Approach 1:
The stacking of interlayer insulating films is combined with segmented conductive pattern formation. Instead of forming continuous conductive patterns across all stacked layers, the process divides pattern formation into stages corresponding to different film stacks. This segmentation maintains high integration density while preventing seam generation that would compromise manufacturing precision.
Data Source
AI summary
A semiconductor device includes interlayer insulating films spaced apart from each other and stacked over each other, and wherein first ends of the interlayer insulating films form a stepped structure; a slit penetrating the interlayer insulating films and dividing the interlayer insulating films into a plurality of stack structures; line patterns arranged between adjacent interlayer insulating films and separated from each other by the slit; pad patterns connected to the line patterns, formed over the first ends of the interlayer insulating films, and separated from each other by the slit; and at least one punch prevention pattern formed over sidewalls of the pad patterns adjacent to the slit and formed over the first ends of the interlayer insulating films.