Semiconductor Pad Slit Plating Corrosion Protection
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Solution Overview
Problem
The existing semiconductor devices face issues with separation at the interface between the plating film and the pad region due to corrosion caused by the penetration of plating solutions and washings, leading to defective coupling and reduced adhesion between the plating film and the interconnection.
Innovation Solution
A semiconductor device configuration is introduced where a slit is provided in the side face of the opening of the insulating film, allowing the plating film to be formed within the slit, which increases the penetration path of the plating solution and washings, thereby reducing corrosion and improving adhesion by filling the space with the plating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a plating film is provided on a pad region, then electrical coupling is improved, but separation occurs at the interface due to corrosion from plating solution penetration
Solution Approach 1:
The opening is divided into a body portion and a slit portion, creating distinct functional zones. The slit portion acts as a barrier that segments the path of plating solution, preventing it from reaching the pad region while allowing the plating film to be formed in the body portion for electrical coupling.
Solution Approach 2:
The slit portion serves as an intermediary structure between the plating film and the pad region. It mediates the interaction by blocking the harmful plating solution while permitting the beneficial electrical coupling function, thus protecting the interface without compromising connectivity.
2Strength
If the opening is made larger to improve plating film formation, then adhesion is enhanced, but corrosion risk increases due to greater solution penetration
Solution Approach 1:
The opening is segmented into a body portion for plating film formation and a slit portion for corrosion prevention. This segmentation allows the opening to be sufficiently large for good adhesion while the slit component blocks corrosion pathways.
Solution Approach 2:
Different portions of the opening have different functions: the body portion is optimized for plating film formation and adhesion, while the slit portion is optimized for blocking plating solution penetration. This local differentiation of quality allows simultaneous achievement of adhesion and corrosion prevention.
3Object-affected harmful factors
If a slit is added to the opening, then corrosion is suppressed, but device complexity increases
Solution Approach 1:
The opening is segmented into simple geometric components (body portion and slit portion) that can be formed using standard photolithography and etching processes. This segmentation achieves corrosion suppression without requiring complex manufacturing steps.
Solution Approach 2:
The slit's dimensions (width, depth, position) can be adjusted as parameters to optimize corrosion protection while minimizing impact on manufacturing complexity. By controlling these parameters, the structure remains simple yet effective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the formation and expansion of corroded portions, enhancing the electrical coupling and adhesion between the plating film and the interconnection, thus improving the overall properties of the semiconductor device.
Implementation Method 1
a plating film OPM1 is provided in the opening OA1, and a plating film OPM2 is provided on the plating film OPM1
Data Source
AI summary
Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).