Semiconductor Pad Structure With Stacked Lines for Lower Parasitic Capacitance
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Solution Overview
Problem
In semiconductor packages, uneven pad density leads to instability and increased parasitic capacitance, causing signal delays and power consumption issues, which affect chip performance.
Innovation Solution
A semiconductor structure with a substrate, a top-layer conductive line, and N layers of secondary-top-layer conductive lines, where the secondary-top-layer conductive lines are arranged on one side of the top-layer conductive line close to the substrate, and dielectric layers are placed between them, controlling the overlap area to reduce parasitic capacitance and enhance density uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the pad structure uses conventional design without controlled overlap, then the manufacturing process is simpler, but the parasitic capacitance increases causing signal delay and power consumption issues
Solution Approach 1:
The patent transitions from a conventional two-dimensional pad layout to a three-dimensional stacked structure with multiple layers of conductive lines at different heights. By arranging conductive lines in the vertical dimension (different z-coordinates) rather than only in the planar dimension, the design reduces overlap area while maintaining electrical connectivity, thereby reducing parasitic capacitance without significantly increasing manufacturing complexity
Solution Approach 2:
The patent divides the pad structure into multiple separate conductive layers (first conductive line layer, second conductive line layer, third conductive line layer) separated by dielectric layers. This segmentation allows each layer to be independently optimized and positioned to minimize overlap areas, reducing parasitic capacitance between adjacent conductors while maintaining the overall pad functionality
2Device complexity
If the pad structure uses conventional design without density control, then the manufacturing process is simpler, but the pad becomes unstable and prone to wear
Solution Approach 1:
The patent applies different materials and structures to different regions of the pad. The bottom of the pad uses a dense arrangement of conductive lines embedded in dielectric material to provide uniform mechanical support and stress distribution. This localized density enhancement at the bottom region improves mechanical stability and wear resistance without requiring complex structures throughout the entire pad area
Solution Approach 2:
The patent employs composite structures combining conductive lines (metal) and dielectric material in alternating layers. This composite arrangement provides both mechanical support through the dielectric material and electrical conductivity through the metal lines, creating a stable pad structure that resists wear and deformation during manufacturing and operation
3Strength
If multiple layers of conductive lines are stacked closely, then the area overlap increases providing better support, but the parasitic capacitance increases causing signal delay
Solution Approach 1:
The patent introduces dielectric layers as intermediary materials between adjacent conductive line layers. These dielectric layers act as electrical insulators that prevent direct electrical contact between conductors on different layers, thereby reducing parasitic capacitance coupling. Simultaneously, the dielectric material provides mechanical support and structural integrity to the stacked configuration, allowing close stacking for support without the penalty of high parasitic capacitance
Data Source
AI summary
Provided is a semiconductor structure, configured to form a pad, including a substrate, a top-layer conductive line, N layers of secondary-top-layer conductive lines and a plurality of dielectric layers, N being an integer greater than or equal to 2. The top-layer conductive line and the N layers of the secondary-top-layer conductive lines are arranged above the substrate. The N layers of the secondary-top-layer conductive lines are arranged on a side of the top-layer conductive line close to the substrate. Each of the plurality of dielectric layers is located between two respective adjacent layers of the secondary-top-layer conductive lines in a vertical direction. For the N layers of the secondary-top-layer conductive lines, an area in which projections of any two layers of the secondary-top-layer conductive lines on a top surface of the substrate overlap with each other is less than a first threshold.