Semiconductor Pad Structure for TSV Process Simplification
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Solution Overview
Problem
Conventional through silicon via (TSV) technology for semiconductor integrated circuit devices requires a large number of processes, leading to increased production costs and reduced productivity due to complexity and inefficiency.
Innovation Solution
A semiconductor integrated circuit device with a multi-layer pad structure, redistribution pad, trench belt, and connection terminal is fabricated, which simplifies the production process by eliminating the need for additional holes and insulation films, and allows for simultaneous signal exchange through a stacked structure of contacts, lines, and vias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional TSV technology is used to connect individual parts or chips, then signal exchange between components is facilitated, but the number of required processes becomes large, complicating production and reducing productivity
Solution Approach 1:
The invention divides the connection structure into segments: a first connection structure formed in a first through-hole and a second connection structure formed in a second through-hole. This segmentation allows parallel formation of multiple connection structures, reducing the total number of sequential processes while maintaining reliable signal exchange between chips.
Solution Approach 2:
The invention transitions from planar connection structures to three-dimensional stacked structures with through-holes extending vertically through the substrate. This dimensional change enables simultaneous formation of multiple connections in the vertical dimension, reducing process complexity and improving productivity.
2Reliability
If conventional TSV technology forms hole patterns and insulation films to electrically isolate micro-wires, then electrical isolation is achieved, but production costs increase and processing efficiency decreases
Solution Approach 1:
The invention merges the electrical isolation function into the connection structures themselves by forming conductive materials that inherently provide isolation. The first and second connection structures are formed with conductive materials that electrically isolate the micro-wires, eliminating the need for separate insulation film formation processes.
Solution Approach 2:
The invention extracts the insulation function from separate insulation films and integrates it directly into the connection structures. The conductive materials forming the connection structures inherently provide the electrical isolation, removing the need for additional insulation film processes and reducing overall manufacturing complexity.
Data Source
AI summary
A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.