Semiconductor Conductive Layout With Parallel Paths for Lower Resistance
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Solution Overview
Problem
Semiconductor devices with higher resistance suffer from decreased operating speeds, necessitating the reduction of resistance in layout design to enhance performance.
Innovation Solution
The implementation of parallel connections among conductive patterns, such as bottom and top conductive patterns, within the semiconductor layout to reduce overall resistance and increase operating speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If resistance is reduced through layout design, then operating speed is improved, but device complexity increases due to parallel conductive patterns
Solution Approach 1:
The conductive patterns are divided into multiple parallel segments (first, second, third conductive patterns) that are electrically connected in parallel. This segmentation reduces overall resistance while maintaining a structured, manageable layout that can be systematically designed and manufactured.
Solution Approach 2:
The conductive patterns extend in different directional dimensions (first direction, second direction perpendicular to first direction) to create parallel current paths. This multi-dimensional arrangement reduces resistance by providing multiple spatial routes for current flow while organizing complexity through geometric structure.
2Reliability
If parallel conductive patterns are implemented, then overall resistance decreases, but manufacturing complexity increases
Solution Approach 1:
Multiple conductive patterns are merged into a unified parallel structure that functions as a single low-resistance electrical path. The patterns are positioned and connected to work together as an integrated system, simplifying the manufacturing process by treating them as a coordinated unit rather than separate components.
Solution Approach 2:
The electrical parameters of the conductive system are changed by transitioning from series to parallel configuration. This parameter change fundamentally alters the resistance characteristics while maintaining compatibility with standard manufacturing processes through systematic pattern design.
Data Source
AI summary
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern on a substrate, a second conductive pattern above the first conductive pattern, and a third conductive pattern above the first conductive pattern, all extending along a first direction. The first conductive pattern is electrically connected in parallel to the second conductive pattern and the third conductive pattern.