Semiconductor Device With Partial Isolation Trenches
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Solution Overview
Problem
Current semiconductor device scaling technologies have reached limitations in enhancing density and performance, particularly in integrating different types of transistors on a single substrate while maintaining optimized performance for each device pattern.
Innovation Solution
The semiconductor device incorporates a base substrate with buried insulating films and separate semiconductor substrate patterns, each with distinct device patterns and gate electrodes, connected by an isolating trench filled with an interlayer insulating film, allowing for independent fabrication processes and optimized performance of transistors with different characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If different types of transistors are integrated on a single substrate, then device density and performance are enhanced, but manufacturing process complexity increases
Solution Approach 1:
The substrate is divided into multiple isolation regions separated by isolation trenches, with each region capable of hosting different transistor types. This segmentation allows independent fabrication processes for each region while maintaining overall integration on a single substrate, thus enhancing device density without proportionally increasing manufacturing complexity.
Solution Approach 2:
Different device patterns are formed in different isolation regions according to their specific requirements. Each region can have customized transistor structures, materials, and processing conditions optimized for its intended function, while the overall substrate provides unified support and interconnection.
2Reliability
If isolation trenches are formed between semiconductor substrate patterns, then device performance is optimized through electrical isolation, but manufacturing steps increase
Solution Approach 1:
Isolation trenches are formed between semiconductor substrate patterns during the fabrication process, establishing electrical isolation boundaries before subsequent device formation steps. This preliminary action prevents contamination and electrical interference between adjacent devices, ensuring reliable operation while integrating multiple isolation regions on a single substrate.
Data Source
AI summary
A semiconductor device includes a base substrate, a buried insulating film on the base substrate, a first semiconductor substrate pattern on the buried insulating film, a second semiconductor substrate pattern on the buried insulating film, the second semiconductor substrate pattern being spaced apart from the first semiconductor substrate pattern, a first device pattern on the first semiconductor substrate pattern, a second device pattern on the second semiconductor substrate pattern, the first and second device patterns having different characteristics from each other, an isolating trench between the first semiconductor substrate pattern and the second semiconductor substrate pattern, the isolating trench extending only partially into the buried insulating film, and a lower interlayer insulating film overlying the first device pattern and the second device pattern and filling the isolating trench.