Semiconductor Particle Detector with Segmented Charge Collection
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Solution Overview
Problem
Existing particle beam detectors absorb a significant amount of radiation, causing beam disturbance and generating unwanted charges that lead to noisy measurements, as they typically require the beam to pass through non-active zones for charge collection.
Innovation Solution
A detector design where the particle beam only passes through the active space charge zone, with charge collection occurring in a peripheral area offset from the beam path, minimizing absorption and noise, and featuring a central part made of wide-gap semiconductor material with a structured interface for enhanced absorption or reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the detector uses a thick semiconductor structure to ensure mechanical strength and complete charge collection, then the mechanical strength and charge collection efficiency are improved, but the beam absorption increases and measurement precision deteriorates
Solution Approach 1:
The detector is divided into a central part and a peripheral part with distinct functions. The central part has reduced thickness to minimize beam absorption and disturbance, while the peripheral part maintains sufficient thickness for mechanical strength and charge collection. This segmentation allows each region to be optimized for its specific purpose without compromise.
2Reliability
If the detector uses a thick semiconductor structure to ensure complete charge collection, then the charge collection efficiency is improved, but the beam disturbance increases and productivity deteriorates
Solution Approach 1:
The detector structure separates the charge collection function (peripheral part with sufficient thickness) from the beam interaction region (central part with reduced thickness). This allows efficient charge collection while minimizing beam absorption and disturbance, thereby maintaining high beam measurement capability and productivity.
Solution Approach 2:
The charge collection electrodes are extracted from the central beam path and placed in the peripheral region. This extraction eliminates the conflict between having electrodes for charge collection and maintaining a clear beam path, allowing both functions to operate optimally simultaneously.
3Measurement precision
If the detector uses a thinned structure to reduce beam absorption, then the beam disturbance is reduced, but the mechanical strength deteriorates
Solution Approach 1:
The detector is segmented into a central part with thinned structure for precise beam measurement and a peripheral part with sufficient thickness for mechanical strength. This segmentation resolves the contradiction by providing both thin and thick regions in a single integrated structure.
Solution Approach 2:
The solution moves from a uniform one-dimensional thickness to a two-dimensional spatial distribution where thickness varies by location. The central region is thinned while peripheral regions maintain full thickness, creating a spatially optimized structure that satisfies both measurement precision and mechanical strength requirements.
4Reliability
If electrodes are installed on the beam path to collect charges, then the charge collection is improved, but the beam absorption by electrode materials increases and measurement precision deteriorates
Solution Approach 1:
The electrodes are extracted from the central beam path and relocated to the peripheral region. This extraction eliminates the direct interaction between electrode materials and the beam, removing the source of additional absorption and noise, while still enabling effective charge collection from the active volume.
Solution Approach 2:
The peripheral semiconductor material acts as an intermediary that carries charges from the active region to the electrodes located in the peripheral zone. This intermediary path allows charge collection without requiring electrodes to be directly in the beam path, thus avoiding beam absorption by electrode materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for precise and less noisy measurements by limiting radiation interactions to the active zone, reducing detector temperature and maintaining mechanical strength through a thicker peripheral structure, while promoting absorption or reflection of specific wavelengths.
Implementation Method 1
charge carriers of a first type and of a second type being generated by said beam when the latter crosses the space charge zone
Implementation Method 2
a structured interface for enhanced absorption or reflection
Implementation Method 3
a structured interface for enhanced absorption or reflection
Data Source
Figure 1A~1B
Figure 2
Figure 3
AI summary
An aspect of the invention concerns a system for measuring (100) a particle beam comprising a first part, called the central part (PC), a second part, called the peripheral part (PP), a front panel (F) and a back panel (B), the front panel (F) being parallel to the back panel (B). The central part (PC) comprises means for producing a space charge zone (ZCE) intended to be passed through by a particle beam (FS) to be measured, charge carriers of a first type and a second type being generated by the particle beam (FS) when the latter passes through the space charge zone (ZCE). The peripheral part (PP) comprises means for collecting at least one type of charge carrier from among the first type or the second type of charge carriers generated in the space charge zone (ZCE). In addition, the peripheral part (PP) surrounds the central part (PC) such that a particle beam (FS) can pass through the central part (PC) without passing through the peripheral part (PP), an orifice (O1) being provided in back panel (B), in a region of the central part (PC) such that the thickness of the said region of the central part (PC), along a normal axis to the front panel (F) is less than the thickness of the peripheral part (PP) along said normal axis.