Semiconductor Passivation Film Diffusion Barrier
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Solution Overview
Problem
In semiconductor devices, the diffusion of electrode materials into surface passivation films during high-temperature electrode formation leads to decreased breakdown voltage, increased current collapse, and variations in device characteristics due to conductive regions forming in the passivation films.
Innovation Solution
A semiconductor device configuration featuring a first nitride surface passivation film with openings for electrodes, covered by a second passivation film with a higher melting point than the electrodes, which prevents electrode material diffusion and acts as a gate isolator, along with specific materials and manufacturing processes to ensure electrical integrity and high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrodes are formed at high temperatures to provide excellent electrical connection, then electrical connection quality is improved, but electrode material diffuses into the surface passivation film causing conductive regions
Solution Approach 1:
A second passivation film with higher melting point is introduced as an intermediary layer between the electrode and the first surface passivation film. This intermediate layer prevents direct contact and diffusion of electrode material into the first passivation film during high-temperature electrode formation, while still allowing the electrode to achieve excellent electrical connection with the semiconductor layer through the openings in the first passivation film.
2Reliability
If electrode material diffuses into the surface passivation film, then electrical connection is enhanced, but breakdown voltage decreases and current collapse increases
Solution Approach 1:
The second passivation film serves as a protective intermediary that blocks electrode material diffusion into the first surface passivation film, preventing the formation of conductive regions that would reduce breakdown voltage and cause current collapse. This maintains the integrity and insulating properties of the first passivation film while still enabling excellent electrical connection through controlled openings.
3Object-generated harmful factors
If a second passivation film with higher melting point is added, then electrode material diffusion is prevented, but device structure becomes more complex
Solution Approach 1:
The passivation structure is segmented into two distinct functional layers: the first surface passivation film with openings that provides electrical connection interfaces, and the second passivation film with higher melting point that provides thermal protection and diffusion barrier. This segmentation allows each layer to perform its specific function optimally while maintaining overall structural organization.
Solution Approach 2:
The second passivation film serves multiple functions simultaneously: it acts as a thermal barrier to protect the first passivation film during high-temperature electrode formation, provides a diffusion barrier to prevent electrode material penetration, and maintains structural integrity. This multi-functionality reduces the need for additional separate protective layers, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents electrode material diffusion into the surface passivation film, maintaining device performance by ensuring excellent electrical contacts and high breakdown voltage, while reducing current collapse and variations in device characteristics.
Implementation Method 1
the second surface passivation film includes a material of which melting point is higher than the melting points of the gate electrode, the source electrode, and the drain electrode... prevents electrode material diffusion
Data Source
AI summary
A semiconductor device includes a substrate, a semiconductor, a first surface passivation film including nitride, a second passivation film, a gate electrode, and a source electrode and a drain electrode. The semiconductor layer is provided on the substrate. The first surface passivation film including nitride is provided on the semiconductor layer and has at least two openings. The second surface passivation film covers an upper surface and a side surface of the first surface passivation film. The gate electrode is provided on a part of the second surface passivation film. The source electrode and the drain electrode are respectively provided on the two openings. In addition, the second surface passivation film includes a material of which melting point is higher than the melting points of the gate electrode, the source electrode, and the drain electrode.