Semiconductor Passivation Structure for Heat Dissipation and Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing FinFET devices and packages face challenges in heat dissipation and electrical interference, which affect performance and efficiency.
Innovation Solution
Incorporation of a thermal conductive material with high thermal conductivity (>4 W/mK) in the isolation structure and use of low-k dielectric materials for gate spacers, along with a design that includes a high thermal conductivity isolation structure to dissipate heat and reduce electrical capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional isolation structures are used in FinFET devices, then device density and integration are improved, but heat dissipation performance deteriorates
Solution Approach 1:
The patent changes the thermal conductivity parameter of the isolation structure from traditional low-k dielectric materials to materials with high thermal conductivity (>4 W/mK), such as diamond-like carbon or aluminum nitride. This parameter change allows the isolation structure to simultaneously maintain electrical isolation and improve heat dissipation performance, resolving the contradiction between device density and temperature management.
Solution Approach 2:
The patent employs composite material structures where the isolation structure incorporates high thermal conductivity materials combined with low-k dielectric properties. This composite approach enables the isolation structure to provide both electrical isolation (low-k property) and thermal management (high thermal conductivity), simultaneously addressing device density requirements and heat dissipation challenges.
2Reliability
If traditional dielectric materials are used for gate spacers, then electrical isolation is improved, but thermal management deteriorates
Solution Approach 1:
The patent changes the material parameters of gate spacers from conventional dielectric materials to low-k dielectric materials with enhanced thermal conductivity. This parameter optimization maintains the electrical isolation function (low-k property) while improving thermal management capabilities, allowing heat to be efficiently conducted away from the gate region without compromising electrical performance.
3Temperature
If high-k dielectric materials are used for heat dissipation, then thermal conductivity is improved, but electrical interference increases
Solution Approach 1:
The patent optimizes the dielectric constant parameter by using low-k dielectric materials instead of high-k materials. This parameter selection reduces electrical interference and capacitance effects while maintaining adequate thermal conductivity through the use of materials with thermal conductivity >4 W/mK, thus improving thermal management without introducing electrical interference problems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves heat dissipation and reduces electrical interference, enhancing the performance and efficiency of FinFET devices.
Implementation Method 1
a thermal conductivity of the thermal conductive material is higher than 4 W/mK
Implementation Method 2
use of low-k dielectric materials for gate spacers
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.