Semiconductor Passivation Chamber Using High-Pressure Plasma
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Solution Overview
Problem
Conventional passivation methods for semiconductor devices face limitations, including high-temperature furnace annealing that can damage materials and low-pressure plasma treatments that are inefficient, especially for high-k dielectric materials, which can lead to material defects and reduced yield.
Innovation Solution
A passivation equipment and method utilizing high-pressure plasma produced by a plasma producing unit with a corona, dielectric barrier, or other plasma sources, creating a chamber environment with pressures above 1 atm to increase free radical concentration and perform passivation at lower temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature furnace annealing is used for passivation, then passivation effect is improved, but semiconductor material can be damaged due to extremely high temperature
Solution Approach 1:
The patent changes the fundamental parameters of the passivation process by using plasma chemistry instead of thermal energy. The plasma process operates at low temperature (avoiding material damage) while achieving effective passivation through reactive species. This represents a paradigm shift from thermal to chemical/physical plasma mechanisms.
Solution Approach 2:
The patent replaces the thermal field (heat-based furnace annealing) with a plasma field (electromagnetic field generating reactive species). This substitution allows passivation to occur through chemical reactions of plasma-generated radicals rather than through thermal diffusion, thereby avoiding temperature-induced material damage.
2Object-affected harmful factors
If plasma treatment at low temperature and low pressure is used, then material damage is avoided, but passivation efficiency is insufficient
Solution Approach 1:
The patent changes the pressure parameter from low pressure to high pressure (near atmospheric pressure). This parameter change increases the density of reactive species in the plasma, thereby enhancing passivation efficiency while maintaining the low-temperature advantage that prevents material damage.
Solution Approach 2:
The patent employs a composite plasma system combining multiple gas components (e.g., H2, N2, O2 in specific ratios) to create a synergistic effect. The composite gas mixture generates diverse reactive species that work together to achieve efficient passivation at high pressure, overcoming the limitations of simple low-pressure plasma treatments.
3Reliability
If high-k dielectric material is used in HKMG structure, then device performance is improved, but the material crystallizes after high-temperature annealing causing gate dielectric layer leakage
Solution Approach 1:
The patent replaces thermal annealing with plasma treatment, substituting a thermal field with a plasma field. This substitution allows passivation of the high-k dielectric material without exposing it to temperatures above its crystallization point, thereby maintaining the amorphous structure and electrical properties of the gate dielectric layer while still achieving defect repair.
Solution Approach 2:
The patent changes the temperature parameter from high temperature (>600°C) to low temperature (below crystallization point), fundamentally altering the processing conditions. This parameter change enables passivation of high-k dielectric materials without triggering phase transitions that would cause leakage, preserving both device performance and material stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the efficiency of the passivation process by increasing free radical concentration and reducing the temperature required for repairing material defects, thereby improving the passivation efficiency and preventing damage to semiconductor devices.
Implementation Method 1
ionizes a reaction gas at a pressure not smaller than 1 atm by a plasma producing unit to produce high-pressure plasma
Implementation Method 2
ionizes a reaction gas at a pressure not smaller than 1 atm by a plasma producing unit to produce high-pressure plasma
Implementation Method 3
The plasma producing unit uses a corona plasma source, and the plasma producing unit includes a high frequency pulse voltage source, a needle electrode and a plate electrode
Implementation Method 4
The plasma producing unit uses a dielectric barrier plasma source, and the plasma producing unit includes a high frequency pulse voltage source and two plate electrodes, in which at least one of the plate electrodes includes a dielectric barrier plate
Data Source
AI summary
A passivation equipment and a passivation method for a semiconductor device are provided in the present invention. The passivation equipment for the semiconductor device includes a chamber housing and a splitter disposed in the chamber housing. The splitter divides the chamber housing to a first chamber and a second chamber. The passivation equipment further includes a first intake tube connected to the first chamber, a plasma producing unit disposed in the first chamber and a pressure detecting unit connected to the first chamber. By using the passivation equipment of the present invention, high-pressure plasma is used to increase a passivation efficiency of the semiconductor device and decrease a temperature of a passivation reaction.