Semiconductor Passivation via Hydrazine Nitridation
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Solution Overview
Problem
Current passivation techniques for high charge-carrier mobility semiconductor materials, such as germanium and group III-V semiconductors, face challenges including high cost, low throughput, and reliability issues due to undesirable inversion thickness and conformality problems, as well as compatibility issues with n-doped devices.
Innovation Solution
The method involves removing native oxide from the semiconductor surface and subsequently passivating it using hydrazine or its derivatives, followed by nitridation to form a nitrogen-containing layer, which can be used to create a stable oxynitride compound, thereby improving the electrical properties and reliability of the semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional passivation techniques are used for high charge-carrier mobility semiconductor materials, then device performance may be improved, but the process suffers from high cost, low throughput, and reliability issues
Solution Approach 1:
The patent changes the chemical parameters of the passivation process by using nitrogen-based precursors (such as ammonia, ammonium fluoride, or organic nitrogen compounds) instead of conventional methods. This parameter change enables a more efficient passivation process that achieves low interface state density while improving throughput and reducing cost through standardized semiconductor manufacturing techniques
Solution Approach 2:
The patent replaces mechanical or complex multi-step passivation processes with a chemical vapor deposition or liquid phase immersion process using nitrogen precursors. This substitution simplifies the manufacturing process, increases throughput, and maintains or improves device reliability through more consistent and controllable chemical reactions
2Manufacturing precision
If conventional passivation techniques are used, then some electrical properties may be improved, but conformality problems and undesirable inversion thickness occur
Solution Approach 1:
The patent changes the chemical composition and deposition parameters of the passivation layer by using nitrogen-based precursors. This enables precise control over the layer thickness and composition, achieving the desired conformality and eliminating inversion thickness problems through controlled chemical reactions that form uniform passivation layers
Solution Approach 2:
The patent uses nitrogen-based compounds as intermediary substances that facilitate the formation of a uniform passivation layer. These intermediaries (ammonia, ammonium fluoride, or organic nitrogen compounds) enable controlled deposition that ensures conformal coverage while maintaining precise thickness control, resolving both conformality and inversion thickness issues
3Adaptability or versatility
If conventional passivation techniques are used, then p-doped devices may benefit, but compatibility issues arise with n-doped devices
Solution Approach 1:
The patent develops a universal passivation process using nitrogen-based precursors that works effectively for both p-doped and n-doped semiconductor devices. This multi-functional approach eliminates the need for different passivation techniques for different device types, improving adaptability while maintaining electrical property stability through the inherent properties of nitrogen passivation layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides exceptionally low oxide trap density and interface state density, enhancing the stability and reliability of semiconductor devices, particularly for both p-doped and n-doped germanium devices, and is compatible with various high mobility semiconductor materials.
Implementation Method 1
nitriding the surface by exposing the surface to a nitrogen precursor
Implementation Method 2
passivating the surface by exposing the substrate to at least one of hydrazine and a hydrazine derivative
Data Source
AI summary
In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.