Semiconductor Passivation Layer Water Vapor Barrier
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Solution Overview
Problem
Existing semiconductor preparation processes are inadequate in preventing water vapor permeation, which damages metal connections and reduces the reliability and lifespan of semiconductor devices due to high densification of silicon nitride layers and High Density Plasma (HDP) processes that can damage metal conductive layers.
Innovation Solution
A method involving the formation of a semiconductor structure with a conductive layer, a passivation layer with a multilayer thin film structure of varying ion concentrations, an insulation layer, a barrier layer, and a second protective layer to effectively prevent water vapor permeation and reduce parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon dioxide layer is used to prevent water vapor permeation, then the crystal structure integrity is maintained, but water vapor still permeates into the metal connection layer affecting device performance
Solution Approach 1:
The patent employs a composite protective structure consisting of multiple layers: a first protective layer (silicon nitride) directly on the metal connection layer, a second protective layer (silicon dioxide) on top, and an intermediate layer. This composite structure leverages the high water vapor barrier properties of silicon nitride while maintaining the electrical insulation and mechanical protection of silicon dioxide, effectively preventing water vapor permeation without compromising the metal connection layer.
Solution Approach 2:
The patent introduces an intermediate layer between the first protective layer (silicon nitride) and the second protective layer (silicon dioxide). This intermediate layer acts as a mediator that prevents direct contact between the two protective layers, avoiding potential chemical reactions or stress conflicts, while still allowing the composite structure to function as an effective water vapor barrier.
2Productivity
If High Density Plasma (HDP) technology is applied to form the dielectric layer, then the deposition efficiency is improved, but the metal conductive layer is damaged reducing reliability
Solution Approach 1:
The patent segments the protective structure into multiple functional layers: a first protective layer (silicon nitride) directly protecting the metal connection layer, a second protective layer (silicon dioxide) providing electrical insulation, and an intermediate layer. This segmentation allows each layer to perform its specific function optimally, with the first protective layer shielding the metal from HDP damage while the second layer provides dielectric properties.
Solution Approach 2:
The patent applies the first protective layer (silicon nitride) to the metal connection layer before performing the HDP process. This preliminary protective action shields the metal conductive layer from potential damage during high-power deposition, allowing efficient dielectric layer formation without compromising metal layer integrity.
3Device complexity
If a single-layer protective structure is used, then the process complexity is reduced, but the water vapor barrier effect is insufficient
Solution Approach 1:
The patent employs a composite protective structure consisting of multiple layers: a first protective layer (silicon nitride) directly on the metal connection layer, a silicon dioxide layer 121 (SiO2), a silicon nitride layer 122 (SIN) and a polyimide layer 123 (Polyimide). This composite structure leverages the high water vapor barrier properties of silicon nitride while maintaining the electrical insulation and mechanical protection of silicon dioxide, effectively preventing water vapor permeation without compromising the metal connection layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly enhances the water vapor barrier effect and reduces parasitic capacitance, thereby improving the reliability and lifespan of semiconductor devices by protecting the conductive layer and optimizing the film structure.
Implementation Method 1
A passivation treatment is performed on the first protective layer to enable the first protective layer to form a passivation layer, and the passivation layer includes a multilayer thin film structure and ion concentrations of the multilayer thin film structure are not the same
Implementation Method 2
High Density Plasma Chemical Vapor Deposition (HDP-CVD) is a high power deposition process
Data Source
AI summary
A method for preparing a semiconductor structure and the semiconductor structure are provided. The method for preparing the semiconductor structure comprises: providing a semiconductor substrate and forming a conductive layer on the semiconductor substrate; forming a first protective layer on a surface of the conductive layer; performing a passivation treatment on the first protective layer to enable the first protective layer to form a passivation layer, wherein the passivation layer comprises a multilayer thin film structure and ion concentrations of the multilayer thin film structure are not the same; forming an insulation layer on the passivation layer; and sequentially forming a barrier layer and a second protective layer on the insulation layer.