Semiconductor Passive Device Layer Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrated Passive Devices (IPD) manufacturing in semiconductor technology is costly and time-consuming, leading to higher product prices due to complex processes and material costs, while existing methods struggle to efficiently integrate components like capacitors and inductors in a compact form.
Innovation Solution
A semiconductor device design that incorporates a substrate with a seed layer, patterned metal layers, and dielectric layers to form capacitors and inductors, where the thickness and arrangement of these layers reduce insertion loss and simplify manufacturing by integrating multiple passive devices in a smaller form factor, thereby reducing material and manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If IPD technology is used to reduce product size, then device miniaturization is achieved, but manufacturing time and material cost increase
Solution Approach 1:
The patent combines capacitor and inductor fabrication into a single integrated process. The patterned metal layer serves dual purposes: it forms the capacitor electrode and the inductor trace in different regions, eliminating the need for separate manufacturing steps for each passive component and reducing overall manufacturing time
Solution Approach 2:
The patterned metal layer performs multiple functions simultaneously: it acts as the lower electrode for capacitors in capacitor regions, as inductor traces in inductor regions, and provides electrical interconnection. This multi-functionality reduces the number of manufacturing steps and material layers required
2Volume of moving object
If IPD technology is used to reduce product size, then device miniaturization is achieved, but material cost increases
Solution Approach 1:
The patent merges capacitor and inductor structures into a single patterned metal layer, reducing the total quantity of metal materials required. Instead of separate metal layers for capacitors and inductors, one patterned layer serves both purposes, directly reducing material cost
Solution Approach 2:
The patterned metal layer is designed to perform multiple functions: capacitor electrode, inductor trace, and interconnection. This universality reduces the total material quantity needed compared to traditional IPD approaches that require separate dedicated layers for each function
3Volume of moving object
If multiple passive devices are integrated in compact form, then device size is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent combines capacitor and inductor fabrication into a single integrated process using one patterned metal layer. This merging simplifies manufacturing by reducing the number of deposition and patterning steps compared to traditional methods that fabricate capacitors and inductors separately
Solution Approach 2:
The patent uses planar patterning of the metal layer to differentiate capacitor and inductor regions within the same layer. By using geometric patterns (connected regions for capacitors, meander traces for inductors) in the same physical layer, it achieves compact integration without increasing vertical manufacturing complexity
Data Source
AI summary
A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.