Semiconductor Pattern Layout for Balanced Etching at Sub-20 Nm
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming miniaturized semiconductor structures due to etching load imbalances and pattern collapse, particularly in advanced technology nodes where line widths are less than 20 nm, leading to defects and incomplete etching.
Innovation Solution
The implementation of dummy patterns in adjacent dummy areas with a closet distance of 15-50 nm to the functional patterns, using materials and densities matching those of the functional patterns, to balance etching loads and enhance structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If miniaturized semiconductor structures are formed in advanced technology nodes, then device size is reduced and integration density is improved, but etching load imbalance and pattern collapse occur leading to manufacturing defects
Solution Approach 1:
The patent applies preliminary action by forming dummy patterns in the dummy area before the actual etching process. These dummy patterns are positioned at specific distances (15-50 nm) from the functional patterns to pre-balance the etching load distribution across the substrate, preventing pattern collapse during miniaturized structure fabrication
2Manufacturing precision
If photoresist is used as a mask in lithography to create patterned structures, then pattern definition is achieved, but robustness of photoresist becomes critical and pattern collapse occurs at miniaturized dimensions
Solution Approach 1:
The patent introduces dummy patterns as intermediary structures that mediate the etching process. These intermediary patterns act as a buffer to distribute etching loads, reducing the stress on the photoresist mask and preventing pattern collapse in miniaturized structures where photoresist robustness is compromised
3Device complexity
If etching process is performed on functional area without dummy area, then manufacturing process is simplified, but etching load imbalance causes defects in functional patterns
Solution Approach 1:
The patent applies local quality by creating a dummy area with specific patterns at defined distances (15-50 nm) from the functional area. This local modification balances the etching load distribution without significantly complicating the overall manufacturing process, maintaining pattern integrity in the functional area
Data Source
AI summary
A method for manufacturing a semiconductor structure includes the following steps. A substrate is received, in which the substrate has a functional area and a dummy area surrounding the functional area. A functional pattern is formed on the functional area and a dummy pattern is formed on the dummy area in a same process step. A closet distance between the dummy pattern and the functional pattern is from 15 nm to about 50 nm. The dummy pattern is removed.