Semiconductor Pattern Formation Using Selective Blocking Layer
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Solution Overview
Problem
Current wafer-level packaging technologies face challenges in ensuring pattern quality and process simplicity, particularly in forming precise patterns for semiconductor devices like FinFETs, due to issues with overlay accuracy, edge placement errors, and pattern collapse in conventional lithography.
Innovation Solution
The method involves using a blocking layer with different radiation absorption rates for selective deposition, where the blocking layer is irradiated to create crosslinked and non-crosslinked portions, allowing for the selective formation of patterns on specific materials without direct contact, thereby simplifying the process and improving precision by eliminating the need for vapor deposition or surface treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography is used for pattern formation, then the process is relatively simple, but overlay accuracy deteriorates and edge placement errors increase
Solution Approach 1:
A blocking layer is introduced as an intermediary material between the first material and the second material. This blocking layer is selectively removed based on radiation absorption differences, enabling precise pattern formation without direct contact between the first and second materials, thereby improving overlay accuracy while maintaining process simplicity
Solution Approach 2:
The patent replaces conventional mechanical lithography processes with a radiation-based selective removal process. By utilizing electromagnetic radiation to differentially affect the blocking layer based on underlying material properties, the method achieves higher precision pattern formation without the complexity of traditional lithographic alignment systems
2Manufacturing precision
If conventional lithography is used for pattern formation, then the process is straightforward, but pattern collapse occurs
Solution Approach 1:
The blocking layer serves as a protective intermediary that is selectively removed after pattern formation. This approach prevents pattern collapse by maintaining structural support during the formation process, then selectively removing the blocking layer in non-crosslinked regions to expose the underlying pattern without causing collapse
Solution Approach 2:
The blocking layer is applied in advance before pattern formation, providing structural support and protection during the critical pattern formation stages. This preliminary protective action prevents pattern collapse, and the blocking layer is subsequently selectively removed to reveal the final pattern
3Manufacturing precision
If selective deposition is performed without a blocking layer, then the process is simpler, but selectivity and precision deteriorate
Solution Approach 1:
The blocking layer acts as a precise intermediary that enables selective deposition. By being selectively removed based on radiation absorption differences, it creates well-defined regions for subsequent material deposition, achieving high precision selectivity without requiring complex direct patterning processes
Solution Approach 2:
The blocking layer creates locally differentiated regions through selective removal. Areas with different underlying materials exhibit different radiation absorption, leading to localized crosslinking or non-crosslinking of the blocking layer, which then enables spatially selective deposition with high precision
4Manufacturing precision
If vapor deposition or surface treatment is used, then pattern formation is achievable, but the process becomes more complex
Solution Approach 1:
The patent extracts and eliminates the need for vapor deposition and surface treatment processes from the fabrication sequence. By using the blocking layer removal approach, pattern formation is achieved through simpler wet chemical or plasma-based removal methods, reducing process complexity while maintaining or improving pattern quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-quality pattern formation with improved precision and reduced complexity, addressing issues of overlay accuracy and pattern collapse, and allows for selective deposition on a broader range of materials, enhancing the yield and reducing costs in semiconductor device manufacturing.
Implementation Method 1
The blocking layer is globally irradiated with an electromagnetic radiation to allow part of the blocking layer to turn into a crosslinked portion
Implementation Method 2
The first material and the second material have different radiation absorption rates
Data Source
AI summary
A method for forming a pattern includes at least the following steps. A first material and a second material abutting the first material are provided. The first material and the second material have different radiation absorption rates. A blocking layer is formed over the first material and the second material. The blocking layer is globally irradiated with an electromagnetic radiation to allow part of the blocking layer to turn into a crosslinked portion. The remaining blocking layer forms a non-crosslinked portion. The non-crosslinked portion covers the second material. The non-crosslinked portion of the blocking layer is removed to expose the second material. A third material is formed over the exposed second material. The crosslinked portion of the blocking layer is removed.