Semiconductor Pattern Defect Correction via Ink-Jet Protection Film

The patent applies preliminary action by forming a protection film on the substrate before etching the resist pattern. This protection film is strategically placed to prevent etching in specific regions, allowing the etching process to selectively remove material only where needed. By preparing this protective layer in advance, the method ensures that subsequent etching operations achieve the desired nanometer-scale pattern accuracy while reliably correcting white defects, as the protection film prevents over-etching and material loss in critical areas.

The patent implements local quality by applying the protection film only to specific regions where white defects are located, rather than uniformly across the entire substrate. This localized approach allows precise defect correction at the nanometer scale by targeting only the problematic areas. The method maintains process efficiency by avoiding unnecessary protection film formation in defect-free regions, thus managing process complexity while achieving high correction precision where it is most needed.

The patent introduces a protection film as an intermediary element between the etching process and the substrate. This intermediary layer acts as a selective barrier that controls where etching occurs. For white defects, the protection film prevents etching in regions where material should be preserved, enabling complete and accurate pattern formation. For black defects, the protection film can be strategically removed or designed to allow etching in specific areas, maintaining the ability to correct these defects while preventing the over-etching that causes white defects.