Semiconductor Pattern Measurement Using Dummy Isolation
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Solution Overview
Problem
Current semiconductor device manufacturing techniques face challenges in achieving high integration with precise pattern formation, leading to errors in critical dimension measurement due to interference from adjacent patterns, especially as devices become more complex.
Innovation Solution
The implementation of a method where second sample dummy patterns are strategically placed on semiconductor substrates, spaced apart from first dummy patterns, allowing for accurate measurement of critical dimensions without interference, thereby enabling the formation of highly reliable semiconductor devices and image sensors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If new exposure techniques are utilized to enable formation of fine patterns, then manufacturing precision is improved, but device complexity increases and high integration becomes difficult
Solution Approach 1:
The patent divides the measurement area into separate regions: a first measurement area with first patterns and a second measurement area with second patterns. This segmentation allows different measurement functions to be performed independently, enabling high integration without interference between measurement operations.
Solution Approach 2:
The patent introduces a third pattern as an intermediary element positioned between the first and second patterns. This third pattern acts as a spatial separator that prevents measurement interference between the first and second measurement areas, allowing both to coexist in a highly integrated layout.
2Productivity
If patterns are highly integrated to reduce device size, then productivity is improved, but measurement precision deteriorates due to interference from adjacent patterns
Solution Approach 1:
The measurement system is segmented into distinct first and second measurement areas that operate independently. The first measurement area measures critical dimensions of first patterns while the second measurement area measures critical dimensions of second patterns, eliminating mutual interference despite high integration.
Solution Approach 2:
The third pattern serves as a mediator that physically separates the first and second measurement areas. By positioning the third pattern between the first and second patterns, it creates sufficient spatial isolation to prevent measurement interference while maintaining high overall integration density.
3Area of stationary object
If adjacent patterns are placed close together to increase integration, then area is reduced, but measurement precision deteriorates due to interference effects
Solution Approach 1:
The patent segments the device into multiple functional areas with dedicated measurement zones. Each measurement area is optimized for its specific measurement task, allowing accurate critical dimension measurement even when overall device area is minimized through high integration.
Solution Approach 2:
The third pattern acts as a buffer or intermediary zone that prevents direct interference between adjacent first and second patterns. This intermediary structure enables the first and second measurement areas to be positioned closer together than would otherwise be possible, reducing total device area while maintaining measurement precision.
Data Source
AI summary
A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.