Semiconductor Pattern Exposure Splicing for Super-Large Dies
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Solution Overview
Problem
The increasing size of semiconductor dies exceeds the exposure range of photomasks, limiting the formation of patterns and hindering the development of large-scale die technology.
Innovation Solution
A double exposure method is used to form patterns in adjacent regions on a substrate, with the patterns being aligned and connected at an interface, allowing for the splicing of larger or longer patterns without altering the existing process environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the die area is increased to accommodate more components, then the device density and integration are improved, but the die area exceeds the photomask exposure range, making pattern formation impossible
Solution Approach 1:
The patent divides the exposure process into multiple segments (first exposure step and second exposure step) using different photomasks. Each photomask covers a specific region (first region or second region) of the substrate, allowing the entire large-area die to be patterned by combining results from multiple exposure operations. This segmentation resolves the contradiction by enabling pattern formation on areas larger than any single photomask can cover.
2Area of moving object
If conventional double exposure is used, then larger patterns can be formed, but the patterns cannot be connected or spliced to form continuous large-scale structures
Solution Approach 1:
The patent merges the patterns formed in the first and second regions by designing them to be in contact with each other at the interface between regions. The alignment process ensures that corresponding features from both exposures match precisely at the boundary, creating continuous, connected patterns across the entire substrate. This merging principle resolves the contradiction by enabling both large pattern area and pattern continuity simultaneously.
Solution Approach 2:
The interface region between the first and second exposure areas acts as an intermediary zone where alignment and connection occur. By establishing alignment marks and reference features at this interface, the patent mediates the connection between separately formed patterns, ensuring they splice together to form continuous structures. This intermediary mechanism enables pattern continuity across the full exposure area.
Data Source
AI summary
The invention provides an exposure method of semiconductor patterns, which comprises the following steps: providing a substrate, performing a first exposure step with a first photomask, forming a first pattern in a first region on the substrate, and performing a second exposure step with a second photomask, forming a second pattern in a second region on the substrate, the first pattern and the second pattern are in contact with each other, and at an interface of the first region And the second region, the first pattern and the second pattern are aligned with each other.