Semiconductor Pattern Inspection Using Fluorophore Super-Resolution Imaging

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Solution Overview

Problem

The increasing demand for ultra-highly integrated semiconductors requires advanced inspection methods capable of detecting nanometer-level semiconductor patterns effectively.

Innovation Solution

A method involving the selective attachment of fluorophores to semiconductor layers using antibodies or proteins, followed by ultra-high resolution microscopy to detect patterns, utilizing techniques like STORM, STED, or SSIM.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional microscopy methods are used for semiconductor inspection, then the inspection process is simple and fast, but the resolution is insufficient to detect nanometer-level semiconductor patterns

Engineering Contradiction:
Improvedetection resolutionVSAvoidinspection process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces fluorophores as intermediary substances that bind to semiconductor patterns through antibodies or proteins. These fluorophores act as mediators between the semiconductor pattern and the detection system, converting nanometer-scale structural information into optically detectable fluorescence signals that ultra-high resolution microscopes can resolve

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent utilizes fluorescence emission (color change) as the detection mechanism. Fluorophores are excited by specific wavelengths of light and emit light at different wavelengths, enabling the visualization and detection of semiconductor patterns through optical color changes that can be captured by ultra-high resolution microscopes

Inventive Principle:
Principle #32Color changes

2Manufacturing precision

If ultra-high resolution microscopy with fluorophore labeling is used, then nanometer-level detection precision is achieved, but the fabrication and inspection process becomes more complex

Engineering Contradiction:
Improvepattern detection accuracyVSAvoidfabrication process simplicity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by pre-coating semiconductor layers with coating materials (such as silicon oxide) that have specific surface properties before the inspection process. This preliminary preparation enables subsequent selective fluorophore attachment and facilitates the ultra-high resolution imaging process

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses antibodies and proteins as intermediary substances that selectively bind to specific semiconductor patterns. These biological intermediaries provide high specificity and selectivity, enabling precise targeting of particular structures while simplifying the overall detection process through bio-specific recognition

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If selective fluorophore attachment is used to enhance detection capability, then measurement precision improves, but the process time and complexity increase

Engineering Contradiction:
Improvesemiconductor pattern detection precisionVSAvoidinspection process time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent employs periodic action in the fluorescence excitation and emission process. Ultra-high resolution microscopes use pulsed or cyclic excitation of fluorophores, allowing for stochastic optical reconstruction (as in STORM microscopy) where fluorophores are activated in periodic cycles to achieve super-resolution imaging while managing the total inspection time

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent utilizes parameter changes in the fluorescence detection process, including varying excitation wavelengths, controlling fluorophore activation states, and adjusting microscope imaging parameters. These parameter optimizations enable faster acquisition of sufficient data for nanometer-level reconstruction while maintaining detection precision

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables effective detection of nanometer-level semiconductor patterns, facilitating defect detection and correction in semiconductor manufacturing processes.

Implementation Method 1

photographing the fluorophore using an ultra-high resolution microscope to detect the semiconductor pattern

Methodology Applied
Scientific EffectFluorescence: Fluorescence

Data Source

PatentUS12616003B2Method for fabricating a semiconductor device
Publication Date: 2026.04.28 SAMSUNG ELECTRONICS CO LTD
  • US12616003B2 patent drawing
  • US12616003B2 patent drawing
  • US12616003B2 patent drawing

AI summary

A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming a semiconductor pattern including a first layer and a second layer on a substrate, forming a coating layer on a surface of the first layer, forming a dyeing substance in which one of an antibody or a protein is combined with a fluorophore, attaching the dyeing substance to a surface of the coating layer to form a dyeing layer, and photographing the fluorophore with an ultra-high resolution microscope to detect the semiconductor pattern.