Semiconductor Pattern Formation with Segmented Etch Masks
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Solution Overview
Problem
In semiconductor device manufacturing, existing methods struggle to form fine and large-width patterns simultaneously without producing defective patterns, as they lack sufficient alignment margin between fine and large-width patterns, especially when using a double patterning process.
Innovation Solution
A method involving the formation of a blocking pattern and a low-density large-width pattern on a substrate, followed by the creation of sacrificial mask patterns and spacers, which are then used as etch masks to etch the first layer, allowing for the simultaneous formation of fine and large-width patterns with a sufficient alignment margin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double patterning process is used to form fine patterns, then fine patterns can be formed, but alignment margin between fine patterns and large-width patterns is insufficient
Solution Approach 1:
The substrate is divided into a first region for fine patterns and a second region for large-width patterns. This spatial segmentation allows independent optimization of patterning processes for each region, enabling fine patterns to be formed with high precision while large-width patterns maintain sufficient alignment margin.
Solution Approach 2:
Different pattern densities are implemented in different regions: high-density fine patterns in the first region and low-density large-width patterns in the second region. This local quality approach allows each region to have optimized characteristics for its specific function, resolving the conflict between fine pattern formation and alignment margin.
2Productivity
If fine patterns and large-width patterns are formed simultaneously, then productivity is improved, but alignment margin is reduced
Solution Approach 1:
The problem is solved by transitioning from a single-region patterning approach to a multi-region approach with different pattern densities. By adding the dimension of spatial region differentiation, the system can simultaneously form both fine and large-width patterns with appropriate alignment margins for each.
3Adaptability or versatility
If patterns of various widths are formed in a single region, then device integration is achieved, but defective patterns are produced due to insufficient alignment margin
Solution Approach 1:
The substrate is segmented into distinct regions: a first region for fine patterns and a second region for large-width patterns. This segmentation allows patterns of various widths to be formed across the substrate while maintaining appropriate alignment margins in each region, preventing defective patterns.
Solution Approach 2:
Each region is assigned a specific pattern density characteristic: high-density fine patterns in the first region and low-density large-width patterns in the second region. This local quality differentiation ensures that each pattern type has sufficient alignment margin, eliminating defects while maintaining versatility.
Data Source
AI summary
Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.