Semiconductor Pattern Layout Rotation for Automatic OPC
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, material patterns formed using photolithography can deviate from the original design due to optical effects during the exposure process, particularly when patterns have edges at angles other than 0 degrees, 45 degrees, or 90 degrees, making it difficult to perform automatic optical proximity correction (OPC).
Innovation Solution
A method involving rotating and modifying the original pattern layout on a mask by specific angles, matching vertices and segment points with reference points, enlarging regions, forming reference patterns, and performing optical proximity correction to create a final pattern that can be rotated again, allowing for automatic OPC even when edges have non-standard angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction is performed on patterns with non-standard angles (other than 0, 45, or 90 degrees), then manufacturing precision deteriorates because automatic OPC cannot be performed, but if pattern rotation and reference point matching is applied, then manufacturing precision improves while maintaining automatic OPC capability
Solution Approach 1:
The patent applies preliminary action by rotating the pattern layout before OPC processing and preparing reference points in advance. This allows the OPC tool to work with standard angles during the automatic correction process, and then the inverse rotation is applied to achieve the final desired pattern orientation with accurate correction
Solution Approach 2:
The patent changes the orientation parameter of the pattern layout by rotating it to standard angles during OPC processing. This parameter transformation enables automatic OPC algorithms to function effectively, and the subsequent inverse rotation restores the original orientation while maintaining the correction benefits
2Manufacturing precision
If pattern layout is rotated and modified through multiple processing steps, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The patent creates a universal methodology that can handle patterns of any orientation by transforming them to standard angles during processing. The reference point matching system serves multiple functions: it tracks pattern orientation, enables rotation operations, and facilitates the inverse transformation back to the original orientation
Solution Approach 2:
The patent applies inversion by rotating the pattern to standard angles for OPC processing, performing the correction, and then rotating back by the inverse angle. This double rotation approach allows standard OPC tools to handle non-standard oriented patterns effectively
3Manufacturing precision
If vertices and segment points are matched with reference points on the mask, then manufacturing precision improves, but ease of manufacture deteriorates due to additional matching and connecting steps
Solution Approach 1:
The patent implements self-service by having the system automatically identify vertices and segment points of the rotated pattern and match them with appropriate reference points on the mask. The computer-implemented algorithm performs the matching and connecting operations automatically without requiring manual intervention, thus maintaining ease of manufacture while achieving high precision
Data Source
AI summary
A layout of original pattern is rotated in a rotational direction to form a layout of rotation pattern. Vertices and segment points of the layout of rotation pattern are matched with ones of the reference points closest thereto, and the matched reference points are connected to form a layout of first modification pattern. A region of the layout of first modification pattern is enlarged to form a layout of second modification pattern. A layout of reference pattern having the same direction as the layout of rotation pattern is formed. A layout of target pattern is formed based on a region where the layouts of reference pattern and second modification pattern overlap. An optical proximity correction is performed on the layout of target pattern to form a layout of third modification pattern, which is rotated in a reverse rotational direction to form a layout of final pattern.