Pattern-Measuring Device for Semiconductor Defect Evaluation
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Solution Overview
Problem
Current methods for inspecting semiconductor circuit patterns struggle to accurately differentiate between shape deformations that affect and do not affect the operation of semiconductor devices, particularly in areas of high and low circuit pattern density, leading to potential false defect determination.
Innovation Solution
A pattern-measuring device that calculates a score for circuit pattern edges by comparing them to a benchmark pattern, using edge distances and dimensions to quantify deformations and determine defects, allowing for efficient and accurate defect evaluation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the same benchmark is used for inspecting all portions of the circuit pattern, then the inspection process is simple and uniform, but shape deformations in portions that do not affect semiconductor device operation are erroneously determined as defects
Solution Approach 1:
The patent segments the circuit pattern into multiple portions based on density characteristics (high-density portions and low-density portions). Different benchmark patterns are assigned to different segments: a first benchmark pattern for high-density portions and a second benchmark pattern for low-density portions. This segmentation allows each portion to be inspected with an appropriate benchmark, reducing false defect detections while maintaining inspection simplicity.
Solution Approach 2:
The patent applies local quality by using different benchmark patterns for different regions of the circuit pattern. Instead of a uniform inspection approach, the system tailors the benchmark selection to the local characteristics of each portion. High-density portions use one benchmark while low-density portions use another, ensuring that each region is evaluated according to its specific requirements and reducing erroneous defect determinations.
2Stability of the object's composition
If uniform inspection benchmark is applied across all circuit pattern densities, then inspection consistency is maintained, but defects such as uniform increase or decrease in circuit pattern distance according to manufacturing device problems are not detected
Solution Approach 1:
The patent introduces dynamics by making the benchmark selection adaptive rather than static. The system dynamically selects between a first benchmark pattern and a second benchmark pattern based on the density characteristics of each circuit pattern portion. This dynamic adaptation allows the inspection system to respond to varying pattern densities and manufacturing variations, improving defect detection reliability while maintaining appropriate inspection consistency through structured benchmark selection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables quantitative evaluation of defects in semiconductor circuit patterns, reducing false positives and improving inspection efficiency by accurately assessing the impact of shape deformations on device operation.
Implementation Method 1
a charged particle beam device measuring a dimension of a first distance between a first edge of pattern data being measured
Data Source
AI summary
In order to provide a pattern-measuring device and a computer program that quantitatively evaluate the effects brought about by the presence of pattern deformations in a circuit, this invention proposes a pattern-measuring device that measures first distances between first edges in pattern data being measured and second edges that correspond to said first edges in a benchmark pattern that corresponds to the pattern being measured. Said pattern-measuring device computes a score for the first edges or the pattern being measured on the basis of the first distances and second distances between the first edges and/or the second edges and third edges that are adjacent to but different from the first and second edges.