Semiconductor Detection Pattern Layout for 2D OPC Deviation Analysis
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing optical proximity correction (OPC) methods are less accurate for two-dimensional patterns in semiconductor manufacturing, and it is difficult to determine which patterning process caused deviations between the pre-designed photomask pattern and the pattern on the silicon wafer, necessitating repeated adjustments.
Innovation Solution
A detection pattern unit with an inner and outer pattern group, including positioning detection patterns, is used to detect patterns on semiconductor devices by generating connecting lines and intersections, superimposing images, and calculating differences between patterns to improve accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) is used to correct pattern deviations, then manufacturing precision is improved, but measurement precision deteriorates because it is difficult to determine which patterning process caused the deviations
Solution Approach 1:
The detection pattern unit is divided into an inner pattern group containing at least one detecting pattern and an outer pattern group containing positioning detection patterns. This segmentation allows the inner detecting pattern to specifically measure deviations caused by particular patterning processes while the outer positioning patterns provide reference frames, thereby improving the ability to identify process-specific deviations.
Solution Approach 2:
The detecting pattern in the inner pattern group serves as an intermediary element that is subjected to the same patterning processes as the product patterns. By comparing the detecting pattern with its pre-designed counterpart after processing, the system can precisely measure deviations introduced by specific processes, acting as a mediator between the process and the measurement system.
2Manufacturing precision
If repeated OPC adjustments are performed to achieve desired pattern accuracy, then manufacturing precision is improved, but productivity deteriorates due to multiple iterations
Solution Approach 1:
The detection pattern unit is designed and prepared in advance with both inner detecting patterns and outer positioning patterns. This preliminary configuration enables single-shot accurate measurement of pattern deviations without requiring repeated adjustments, as the detection unit is already optimally structured to capture all necessary deviation information in one measurement cycle.
Solution Approach 2:
The detection pattern unit provides immediate and accurate feedback on pattern deviations by comparing the actual detecting pattern with its pre-designed counterpart. This precise feedback mechanism eliminates the need for multiple iterative OPC adjustments, allowing for direct correction based on single measurement results and significantly improving manufacturing efficiency.
3Device complexity
If a simple detection pattern is used, then device complexity is reduced, but measurement precision deteriorates because it cannot accurately detect two-dimensional pattern deviations
Solution Approach 1:
The detection pattern unit transitions from simple one-dimensional detection to two-dimensional detection by incorporating both inner detecting patterns and outer positioning patterns arranged in multiple dimensions. The outer pattern group surrounds the inner pattern group, creating a two-dimensional reference frame that enables accurate measurement of deviations in multiple directions simultaneously, thus improving measurement precision without excessive complexity.
Data Source
AI summary
A detection pattern unit includes an inner pattern group, and an outer pattern group that includes two sets of positioning detection patterns, each set including two lines of patterns. For each set, a pitch dimension between adjacent two patterns in one line of the set is the same as a pitch dimension between adjacent two patterns in the other lines of the set. The outer pattern group further includes, for each of two different directions, two connecting lines each extending along the direction and each interconnecting two of the positioning detection patterns respectively from the two lines of a corresponding one of the sets of positioning detection patterns.