Semiconductor Pattern Transfer With Region-Specific Pitch Control
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Solution Overview
Problem
Traditional methods for fabricating semiconductor structures cannot independently miniaturize patterns in certain regions while maintaining pattern sizes in others, due to the synchronous control of pattern sizes across the entire structure.
Innovation Solution
A method involving the formation of specific patterns with varying gap widths, where a first mask layer fills gaps in one region and does not fill gaps in another, allowing for selective miniaturization of patterns by controlling the width of these gaps during the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional synchronous pattern transfer methods are used, then manufacturing process is simple, but pattern size cannot be independently controlled in different regions
Solution Approach 1:
The semiconductor wafer is divided into multiple regions (first region and second region), and each region is assigned different gap widths in the mandrel pattern. This segmentation allows independent control of pattern sizes in different regions through the etching process, resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
Different gap widths are assigned to different regions: the first region has a first gap width that allows mask layer filling, while the second region has a second gap width that prevents mask layer filling. This local differentiation enables region-specific pattern size control, achieving high manufacturing precision without requiring complex multi-step processes.
2Manufacturing precision
If mask layer is formed to fill all gaps, then pattern miniaturization is achieved, but pattern size cannot be maintained in regions where miniaturization is not required
Solution Approach 1:
The gap width parameter is changed between regions: the first gap width is designed to be fillable by the mask layer, while the second gap width is designed to be non-fillable. This parameter differentiation allows the mask layer formation process to automatically achieve selective pattern size control, simplifying the manufacturing process while maintaining high precision.
3Manufacturing precision
If gap width is increased to prevent mask layer filling, then pattern size is maintained, but pattern miniaturization cannot be achieved in regions where it is required
Solution Approach 1:
The mandrel pattern is designed in advance with different gap widths for different regions before the mask layer formation step. This preliminary action embeds the region-specific control requirements into the mandrel structure itself, allowing the subsequent mask layer formation to automatically produce the desired selective pattern sizes without additional complex control mechanisms.
Data Source
AI summary
Embodiment relates to a method for fabricating a semiconductor structure. The method includes: forming a first pattern on the first region and forming a second pattern on the second region, wherein the first pattern includes a plurality of first sub-patterns, a first gap is provided between adjacent two of the plurality of first sub-patterns, a width of the first gap is a first pitch, and wherein the second pattern includes a plurality of second sub-patterns, a second gap is provided between adjacent two of the plurality of second sub-patterns, a width of the second gap is a second pitch, and the second pitch is greater than the first pitch; forming a first mask layer on a sidewall of the first pattern, and forming a second mask layer on a sidewall of the second pattern; and removing the first pattern and the second pattern.