Self-Cutting Semiconductor Pattern Formation via Spacer Layer
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in miniaturizing semiconductor structures and features, particularly in forming isolated second core features without additional cutting steps, which increases process cost and time due to the formation of connected comb-like patterns.
Innovation Solution
A self-cutting method involving the formation of a substrate with first core features, a frame feature, and a spacer layer to create individual recesses, allowing for the separation of second core features with a different length, which are then transferred to form isolated semiconductor structures and a frame structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional photolithography techniques are used to form semiconductor structures, then the manufacturing process is simple, but additional cutting steps are required to separate connected comb-like patterns, increasing process complexity and time
Solution Approach 1:
The patent applies preliminary action by forming a mandrel structure with predefined gap regions before depositing the semiconductor material. The gaps are created in advance during mandrel formation, eliminating the need for subsequent cutting steps to separate the comb-like patterns. This preliminary structuring enables direct formation of isolated semiconductor structures.
Solution Approach 2:
The mandrel structure serves as an intermediary element that facilitates the formation of isolated semiconductor structures. The mandrel with its predefined gaps acts as a template or mediator, allowing the semiconductor material to be deposited in a controlled manner that automatically creates the desired isolated structures without requiring additional separation steps.
2Manufacturing precision
If additional cutting steps are added to separate comb-like patterns, then isolated semiconductor structures can be formed, but process time and manufacturing cost increase
Solution Approach 1:
The gaps are formed in advance during mandrel creation, allowing precise isolation of semiconductor structures to be achieved before material deposition. This preliminary gap formation eliminates the need for time-consuming post-deposition cutting steps while maintaining high isolation precision.
Solution Approach 2:
The mandrel structure with predefined gaps performs the isolation function automatically during the material deposition process. The gaps in the mandrel self-service as the separation mechanism, eliminating the need for separate cutting operations and reducing overall process time while achieving precise structure isolation.
3Productivity
If semiconductor structures are miniaturized to meet integration requirements, then device integration increases, but the difficulty of forming precise patterns increases
Solution Approach 1:
The mandrel structure acts as an intermediary template that enables precise pattern formation at miniaturized dimensions. By defining the gap regions in the mandrel before material deposition, the method achieves high pattern precision required for miniaturized devices without increasing manufacturing difficulty.
Solution Approach 2:
The method changes the formation parameter from post-deposition cutting to pre-deposition gap definition. By defining gaps in the mandrel structure before material deposition, the process achieves better control over pattern dimensions and spacing, enabling precise formation of miniaturized semiconductor structures.
Data Source
AI summary
A method includes forming a plurality of first core features and one frame feature encircling the first core features. The first core features extend along a first direction and are arranged along a second direction perpendicular to the first direction, and each of the first core features is spaced apart from the frame feature by a first gap along the first direction. The method also includes forming a spacer layer filling the first gaps and forming a plurality of individual recesses entirely separated from each other. The method also includes forming a plurality of second core features in the individual recesses, wherein the second core features are entirely separated from each other and are spaced apart from the frame feature by the spacer layer. The method then removes the spacer layer to form a plurality of openings between the first core features, the second core features and the frame feature.