Semiconductor Patterning via Intermediate Material Layer Segmentation

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Solution Overview

Problem

Current photolithography processes for semiconductor device miniaturization are costly and time-consuming, requiring significant research and development to achieve stable and quick formation of micropatterns.

Innovation Solution

A method involving the formation of intermediate material layers and multiple mask patterns using photoresist and inorganic materials, with plasma processes for deposition and thinning, allows for precise patterning of semiconductor devices without the need for advanced exposing equipment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If advanced photolithography processes (phase shifting mask, off axis illumination, immersion lithography) are employed to achieve micropattern formation, then pattern resolution and device performance are improved, but research and development costs and process complexity increase enormously

Engineering Contradiction:

Improvepattern resolutionVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent divides the single complex photolithography process into multiple simpler steps: forming a first mask pattern, depositing an intermediate material layer, forming a second mask pattern, and selectively removing portions. This segmentation allows each step to be performed with standard equipment rather than requiring advanced single-step lithography processes.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The intermediate material layer is deposited in advance between the first and second mask patterns, preparing the structure for subsequent patterning steps. This preliminary action enables precise control over the final micropattern without requiring complex real-time lithography adjustments.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If advanced photolithography processes are used to achieve stable micropattern formation, then pattern stability and device performance are improved, but development time and cost increase significantly

Engineering Contradiction:

Improvepattern stabilityVSAvoiddevelopment time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

By segmenting the patterning into discrete steps with an intermediate material layer, each step can be optimized independently for stability while using standard, readily available processes, reducing overall development time compared to mastering complex advanced lithography.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The intermediate material layer acts as a mediator between the first and second mask patterns, enabling stable pattern transfer through controlled deposition and removal processes that are well-established in semiconductor manufacturing.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Manufacturing precision

If the intermediate material layer is formed by depositing material on the first mask pattern and target layer, then precise width control corresponding to feature width is achieved, but process steps increase

Engineering Contradiction:

Improvewidth control precisionVSAvoidnumber of process steps

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The deposition process parameters (thickness, composition, deposition rate) of the intermediate material layer are carefully controlled to achieve the precise width corresponding to the desired feature width, allowing accurate dimensional control through material property adjustment.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the rapid and economical development of high-performance semiconductor devices with improved resolution and capacity, overcoming the limitations of traditional photolithography processes.

Implementation Method 1

depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

removing the exposed second portion of the intermediate material layer to expose the target layer

Methodology Applied

Scientific EffectSputtering: Sputtering

Data Source

PatentUS7842450B2Method of forming a semiconductor device

Publication Date: 2010.11.30 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.