Semiconductor Patterning Process Using Silicon-Containing Film
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current patterning processes face challenges in achieving high overlay accuracy and efficient miniaturization for semiconductor manufacturing, particularly in forming finer patterns with reduced line edge roughness and aberration, due to limitations in light source wavelength and resist material properties.
Innovation Solution
A patterning process involving a positive chemically amplifying photoresist film and a silicon-containing film composition that becomes insoluble with heat or acid, allowing for the formation of a negatively developed pattern and subsequent transfer of the pattern to the substrate using a silicon-containing film as an etching mask, enabling halved pitch patterns with improved resolution and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photo lithography with shorter wavelength light sources is used to achieve further miniaturization, then resolution is improved, but manufacturing complexity and cost increase significantly
Solution Approach 1:
The patent divides the patterning process into multiple stages: first forming a mandrel pattern, then forming spacer patterns on the sidewalls, and finally transferring the combined pattern to the substrate. This segmentation allows achieving finer effective pitch (half of original pattern pitch) without requiring proportionally more complex lithography equipment, as each stage uses standard lithography processes
Solution Approach 2:
The patent introduces a spacer material as an intermediary element that bridges the gap between the mandrel pattern and the final target pattern. The spacer material (with specific etch selectivity different from both mandrel and substrate) acts as a mediator that enables pattern transfer at half the original pitch through sidewall deposition and etching processes
2Manufacturing precision
If double patterning process with multiple dry-etching steps is used to form finer patterns, then manufacturing precision is improved, but processing time and productivity decrease
Solution Approach 1:
The patent combines multiple patterning functions into a unified sidewall spacer process flow. Instead of separate double patterning steps with multiple dry-etchings, the method integrates mandrel formation, spacer deposition, and pattern transfer into a coordinated sequence that achieves the same fine pattern resolution with reduced process steps and improved throughput
3Manufacturing precision
If existing patterning methods are used to form half-pitch patterns, then manufacturing precision may be maintained, but line edge roughness increases
Solution Approach 1:
The spacer material performs multiple functions self-consistently: it forms the sidewall structure, defines the pattern boundary, and serves as the etching mask for transferring the final pattern. This self-service capability of the spacer material ensures consistent line edge definition and reduced roughness, as the same material that forms the pattern boundary is also used to transfer it to the substrate with high fidelity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enables the formation of finer patterns with enhanced overlay accuracy and reduced line edge roughness, addressing the limitations of existing technologies by utilizing a silicon-containing film to efficiently transfer patterns and improve etching selectivity.
Implementation Method 1
forming a silicon-containing film on the substrate to be processed having thereon the negatively developed pattern by applying a silicon-containing film composition comprising a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both
Implementation Method 2
forming a silicon-containing film on the substrate to be processed having thereon the negatively developed pattern by applying a silicon-containing film composition comprising a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both
Implementation Method 3
forming a photoresist film on a substrate to be processed by using a positive chemically amplifying photoresist film composition which contains an acid generator, followed by subjecting the photoresist film to photo-exposure
Data Source
AI summary
The invention provides a patterning process comprises the steps of: (1) forming a positive chemically amplifying type photoresist film on a substrate to be processed followed by photo-exposure and development thereof by using an organic solvent to obtain a negatively developed pattern, (2) forming a silicon-containing film by applying a silicon-containing film composition comprising a solvent and a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both, (3) insolubilizing in a solvent the silicon-containing film in the vicinity of surface of the negatively developed pattern, (4) removing the non-insolubilized part of the silicon-containing film to obtain an insolubilized part as a silicon-containing film pattern, (5) etching the upper part of the silicon-containing film pattern thereby exposing the negatively developed pattern, (6) removing the negatively developed pattern, and (7) transferring the silicon-containing film pattern to the substrate to be processed.