Semiconductor Patterning with Spacer-Aligned Directed Self-Assembly
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Solution Overview
Problem
Conventional photolithography methods struggle to create small spaces between patterned semiconductor structures without wiggling shapes, leading to structural defects and performance issues in semiconductor devices.
Innovation Solution
A method involving a first and second composite substrate with spacers, filled with a directed self-assembly material, followed by removal of certain portions and filling with oxide layers to achieve precise and aligned patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography is used to pattern semiconductor structures, then the fabrication process is simple and well-established, but the space between patterned structures cannot be made small enough and wiggling shapes occur
Solution Approach 1:
The patent divides the patterning process into multiple stages using separate composite substrates. Each substrate carries a set of spacers that are processed independently, then combined through self-alignment. This segmentation allows each substrate to be optimized for specific pattern requirements while achieving overall high precision that would be difficult with a single photolithography step.
Solution Approach 2:
The patent transitions from planar 2D photolithography to a 3D approach using vertically stacked composite substrates. Patterns are formed in multiple layers at different heights, with spacers on upper substrates self-aligning to patterns on lower substrates. This dimensional transition enables smaller feature sizes and eliminates wiggling shapes by providing mechanical support from multiple levels.
2Reliability
If photolithography is used for patterning, then the process is straightforward, but wiggling shapes occur in the patterned structures causing structural defects
Solution Approach 1:
The patent provides mechanical support and stabilization beforehand by creating multiple layers of spacers on composite substrates before the final patterning step. These pre-formed structures act as cushions that prevent wiggling and structural defects during subsequent processing, ensuring pattern accuracy is maintained throughout fabrication.
Solution Approach 2:
The patent introduces directed self-assembly material as an intermediary between the spacer structures and the final pattern transfer. This material fills spaces between spacers and enables precise pattern formation through self-organization, acting as a mediator that translates the spacer geometry into accurate final patterns without direct photolithographic exposure.
3Length of moving object
If smaller spaces between patterned structures are achieved, then device scaling is improved, but wiggling shapes and structural defects increase
Solution Approach 1:
The patent implements a nested structure where spacers on an upper composite substrate are positioned within and aligned to patterns on a lower composite substrate. This nesting arrangement allows smaller feature sizes at each level while maintaining structural integrity through the hierarchical support system, preventing wiggling shapes even at reduced dimensions.
Solution Approach 2:
The patent uses composite substrates combining multiple materials with different properties - rigid spacer materials for structural support, flexible directed self-assembly materials for pattern formation, and etch-resistant materials for protection. This composite approach enables smaller features while maintaining reliability through material property optimization at each structural level.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of smaller, aligned, and defect-free patterns, improving semiconductor device performance and manufacturing processes.
Implementation Method 1
Spaces between the first spacers and the second spacers are filled with a directed self-assembly material
Data Source
AI summary
The disclosure provides a method of patterning a semiconductor structure. A first composite substrate including first spacers on a first substrate and a second composite substrate including second spacers on a second substrate are received. The second composite substrate is disposed on the first composite substrate, in which at least one of the first spacers is in direct contact with at least one of the second spacers. Spaces between the first spacers and the second spacers are filled with a directed self-assembly material, in which the directed self-assembly material includes first portions between the first spacers and the second substrate, second portions between the second spacers and the first substrate, and third portions being remaining portions. The second composite substrate, the first spacers, and the first portions and the second portions are removed. Oxide layers are filled between the third portions. The third portions are removed.